RJ1P12BBD is an N-channel 100V power MOSFET in a TO-263AB package, designed for switching applications. It has a maximum continuous drain current of ±120A and a maximum on-state resistance of 5.8mΩ at VGS=10V and ID=50A. The device supports a peak pulse drain current of ±240A and dissipates up to 178W. It features avalanche capability with a single-pulse energy rating of 125mJ and is RoHS compliant and halogen-free. Thermal resistance from junction to case is 0.70℃/W. Operating junction temperature range is -55℃ to +150℃.
RJ1P12BBD is a Power MOSFET with Low on - resistance, suitable for Switching.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | RJ1P12BBD |
| Product Name | Nch 100V 120A Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 100 volts |
| IDSS | 120000 milliamps |
| QG | 51 nC |
| PD | 178000 milliwatts |
