Texas Instruments CSD16409Q3 N-Channel NexFET™ Power MOSFET CSD16409Q3

N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150

Power Field-Effect Transistor, 60A I(D), 25V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer: Texas Instruments
Win Source Part Number: 013353-CSD16409Q3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSON (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 15A (Ta), 60A (Tc)
Gate-Source Threshold Voltage: 2.3V @ 250μA
Max Gate Charge: 5.6nC @ 4.5V
Max Input Capacitance: 800pF @ 12.5V
Maximum Gate-Source Voltage: +16V, -12V
Maximum Rds On at Id,Vgs: 8.2 mOhm @ 17A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient

N-Channel 25V 15A (Ta), 60A (Tc) 2.6W (Ta) Surface Mount 8-VSONP (5x6)

N-Channel 25V 15A (Ta), 60A (Tc) 2.6W (Ta) Surface Mount 8-VSONP (5x6)

N-Channel 25V 15A (Ta), 60A (Tc) 2.6W (Ta) Surface Mount 8-VSONP (5x6)