N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150
25V N-CH MOSFET, 60A, 8.2mR, SON, 150C Product overview: CSD16409Q3 from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD16409Q3 can be used for catalog matching and distributor lookup.
N-Channel 25V 15A (Ta), 60A (Tc) 2.6W (Ta) Surface Mount 8-VSONP (5x6)
N-Channel 25V 15A (Ta), 60A (Tc) 2.6W (Ta) Surface Mount 8-VSONP (5x6)
N-Channel 25V 15A (Ta), 60A (Tc) 2.6W (Ta) Surface Mount 8-VSONP (5x6)
Power Field-Effect Transistor, 60A I(D), 25V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer: Texas Instruments
Win Source Part Number: 013353-CSD16409Q3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSON (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 15A (Ta), 60A (Tc)
Gate-Source Threshold Voltage: 2.3V @ 250μA
Max Gate Charge: 5.6nC @ 4.5V
Max Input Capacitance: 800pF @ 12.5V
Maximum Gate-Source Voltage: +16V, -12V
Maximum Rds On at Id,Vgs: 8.2 mOhm @ 17A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 25V 15A/60A 8VSON
MOSFET N-Ch NexFET Power MOSFETs
| Texas Instruments | ERSAELECTRONICS PTE. LTD. | DigiKey | Rochester Electronics | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD16409Q3 | 278-CSD16409Q3 | 296-24253-2-ND | CSD16409Q3 | 013353-CSD16409Q3 | CSD16409Q3 | CSD16409Q3 |
| Product Name | CSD16409Q3 N-Channel NexFET™ Power MOSFET | 25V 60A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD16409Q3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 25 volts | 25 volts | |||||
| rDS(on) | 0.0124 ohms | 0.0124 ohms | |||||
| IDSS | 90000 milliamps | ||||||
| QG | 4 nC |
