ROHM Semiconductor GmbH Nch 40V 60A Power MOSFET RD3G600GN

Description
RD3G600GN is a power MOSFET with low-on resistance and High power package (TO-252), suitable for switching.
Description
RD3G600GN is a power MOSFET with low-on resistance and High power package (TO-252), suitable for switching.
Datasheet
Datasheet Summary
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RD3G600GN is an N-channel 40V power MOSFET in a TO-252 package for switching applications. It has a maximum continuous drain current of ±60A, a maximum on-resistance of 3.6mΩ at VGS=10V and ID=60A, and a power dissipation rating of 40W. The device is RoHS compliant and halogen free, with a junction temperature range of -55°C to +150°C and a thermal resistance from junction to case of 3.1°C/W.

Datasheet Summary
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RD3G600GN is an N-channel 40V power MOSFET in a TO-252 package for switching applications. It has a maximum continuous drain current of ±60A, a maximum on-resistance of 3.6mΩ at VGS=10V and ID=60A, and a power dissipation rating of 40W. The device is RoHS compliant and halogen free, with a junction temperature range of -55°C to +150°C and a thermal resistance from junction to case of 3.1°C/W.

Suppliers

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Nch 40V 60A Power MOSFET - RD3G600GN - ROHM Semiconductor GmbH
Willich, Germany
Nch 40V 60A Power MOSFET
RD3G600GN
Nch 40V 60A Power MOSFET RD3G600GN
RD3G600GN is a power MOSFET with low-on resistance and High power package (TO-252), suitable for switching.

RD3G600GN is a power MOSFET with low-on resistance and High power package (TO-252), suitable for switching.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number RD3G600GN
Product Name Nch 40V 60A Power MOSFET
Polarity N-Channel
V(BR)DSS 40 volts
IDSS 60000 milliamps
QG 23.5 nC
PD 40000 milliwatts
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