R6002END3 is an N-channel 600V power MOSFET in a TO-252 package, designed for switching power supplies. It has a maximum continuous drain current of 1.7A and a maximum on-resistance of 3.4Ω at 25°C. The device supports a power dissipation of 26W, with a junction temperature range of -55°C to +150°C. It is RoHS compliant and features fast switching and simple drive circuitry. Thermal resistance from junction to case is 4.9°C/W, and junction to ambient is 147°C/W. The gate threshold voltage ranges from 2V to 4V, and the device includes a body diode with a reverse recovery time of 240ns and a peak reverse recovery current of 7.0A.
R6002END3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | R6002END3 |
| Product Name | 600V 2A TO-252, Low-noise Power MOSFET |
| Polarity | N-Channel |
| V(BR)DSS | 600 volts |
| IDSS | 2000 milliamps |
| QG | 6.5 nC |
| PD | 26000 milliwatts |
