N-Channel 1200V 36A (Tc) 150W (Tc) Through Hole PG-TO247-3-41
1200V COOLSIC MOSFET PG-TO247-3
Manufacturer: Infineon Technologies
Category: Discrete Semiconductor Products -Transistors FETs, MOSFETs- Single FETs, MOSFETs
Series: Automotive, AEC-Q101, CoolSiC™
Package: Tube
Product Status: Active
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Power Dissipation (Max): 150W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
MOSFET, SIC, N-CH, 1.2KV, 36A, TO-247 ROHS COMPLIANT: YES
DigiKey | Shenzhen Shengyu Electronics Technology Limited | Win Source Electronics | Newark, An Avnet Company | |
---|---|---|---|---|
Product Category | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
Product Number | 448-AIMW120R060M1HXKSA1-ND | AIMW120R060M1HXKSA1 | 52AJ4419 | |
Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Discrete Semiconductor Products -Transistors FETs, MOSFETs- Single FETs, MOSFETs | Mosfet, Sic, N-Ch, 1.2Kv, 36A, To-247 Rohs Compliant Infineon |
Polarity | N-Channel | N-Channel | ||
Transistor Technology / Material | Silicon Carbide | |||
Package Type | TO-247; TO-247-3 | TO-247; TO-247-3 | SOT3 | TO-3; TO-247 |