The QS5W2 is an NPN+NPN driver transistor from ROHM Semiconductor, designed for middle power applications with a maximum collector-emitter voltage (VCEO) of 50V and a collector current (IC) rating of 3A. It features a low saturation voltage, typically 350mV at 1A of collector current and 50mA of base current, which enhances efficiency in switching applications. The transistor is packaged in a compact SOT-25T form factor, making it suitable for space-constrained designs. It is applicable in low-frequency amplifiers and high-speed switching circuits. The device operates within a junction temperature range of -55¬8C to +150¬8C and has a power dissipation capability of up to 1.25W when mounted appropriately. The QS5W2 also exhibits high-speed switching characteristics, with a transition frequency of 320MHz, making it suitable for high-frequency applications.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | QS5W2 | QS5W2 |
| Product Name | NPN+NPN, SOT-25T, Driver Transistor | NPN+NPN Driver Transistor |
| Polarity | NPN | NPN |
