Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2N5550TFR 2N5550TFR

The 2N5550TFR is an NPN epitaxial silicon transistor in a TO-92 3L package with tape and reel packaging. It has a collector-emitter voltage rating of 140 V, a collector current rating of 600 mA, and a power dissipation of 625 mW. The device has a junction temperature rating of 150°C and a thermal resistance of 200°C/W. It is suited for amplifier applications and meets standard bipolar transistor performance characteristics including a DC current gain ranging from 20 to 250, a collector-emitter saturation voltage up to 0.25 V, and a current gain bandwidth product of up to 300 MHz. It is not designed for use in life support systems or medical implants.