The ALD111933PAL is a dual N-channel enhancement mode matched pair MOSFET array in an 8-pin plastic DIP package, designed for precision low-power analog applications such as current mirrors and differential amplifiers. It features a precision threshold voltage of +3.30V with a maximum offset voltage of 20mV between the matched devices, and a negative temperature coefficient of -1.7 mV/°C for the threshold voltage. The device operates from 0°C to +70°C, with a drain-source voltage rating of 10.6V and a maximum power dissipation of 500mW. Both MOSFETs exhibit low input capacitance, low gate and drain leakage currents, and fast switching speeds with 10ns turn-on and turn-off delays. The pins are configured for connection of both sources to the most negative supply potential, with internally connected IC pins.
MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP
Mosfet Array 2 N-Channel (Dual) Matched Pair 10.6V 500mW Through Hole 8-PDIP
MOSFET 2N-CH 10.6V 8DIP
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | ALD111933PAL | 1014-1051-ND | ALD111933PAL |
| Product Name | DUAL N-CHANNEL ENHANCEMENT MODE EPAD® MATCHED PAIR MOSFET ARRAY | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||
| MOSFET Operating Mode | Enhancement; Enhancement Mode | ||
| V(BR)DSS | 10 volts | ||
| IDSS | 3 milliamps |