60-V Dual N-Channel NexFET Power MOSFET, CSD88537ND 8-SOIC -55 to 150
Manufacturer: Texas Instruments
Win Source Part Number: 771899-CSD88537NDT
Series: NexFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-SOIC (0.154", 3.90mm Width)
Mounting: SMD
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Current - Continuous Drain (Id) @ 25°C: 15A
Power - Max: 2.1W
Family Name: CSD88537ND
Categories: Discrete Semiconductor Products
Manufacturer Package: 8-SO
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 3.6V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1400pF @ 30V
Rds On (Maximum) @ Id, Vgs: 15 mOhm @ 8A, 10V
Alternative Parts (Cross-Reference): CSD88537ND;
Introduction Date: February 07, 2014
ECCN: EAR99
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
MOSFET 2N-CH 60V 15A 8SOIC
60-V, N channel NexFET™ power MOSFET, dual SO-8, 15 mOhm 8-SOIC -55 to 150 Product overview: CSD88537NDT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, Dual, 15 mOhm, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 15 mOhm, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-CSD88537NDT can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 60V 15A 2.1W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 60V 15A 2.1W Surface Mount 8-SOIC
Mosfet Array 2 N-Channel (Dual) 60V 15A 2.1W Surface Mount 8-SOIC
MOSFET, DUAL N-CH, 60V, 15A, SOIC-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET 2N-CH 60V 15A 8SOIC
| Texas Instruments | Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | CSD88537NDT | 771899-CSD88537NDT | CSD88537NDT | 289-CSD88537NDT | 296-37795-6-ND | 29AH3855 | CSD88537NDT |
| Product Name | CSD88537ND 60-V Dual N-Channel NexFET Power MOSFET, CSD88537ND | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD88537NDT | FET, MOSFET Arrays | N-Channel Dual 15 mOhm SOIC MOSFET Transistor | FET, MOSFET Arrays | Mosfet, Dual N-Ch, 60V, 15A, Soic-8; Transistor Polarity Texas Instruments | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | ||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| IDSS | 62000 milliamps | 15000 milliamps | 15000 milliamps | ||||
| QG | 14 nC | 18 nC | |||||
| Package Type | SO-8 | SOT3 | 8-SOIC (0.154", 3.90mm Width) | "8-SOIC (0.154"", 3.90mm Width)" | TO-3 |
