Qorvo DC - 20 GHz, 250 um Discrete GaAs pHEMT Die QPD2025D

Description
Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2025D typically provides 24 dBm of output power at P1dB with gain of 14 dB and 58% power-added efficiency at 1 dB compression. This performance makes the QPD2025D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection. Lead-free and RoHS compliant.
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Description
Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2025D typically provides 24 dBm of output power at P1dB with gain of 14 dB and 58% power-added efficiency at 1 dB compression. This performance makes the QPD2025D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection. Lead-free and RoHS compliant.
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Suppliers

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Product
Description
Supplier Links
DC - 20 GHz, 250 um Discrete GaAs pHEMT Die - QPD2025D - Qorvo
Greensboro, NC, United States
DC - 20 GHz, 250 um Discrete GaAs pHEMT Die
QPD2025D
DC - 20 GHz, 250 um Discrete GaAs pHEMT Die QPD2025D
Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2025D typically provides 24 dBm of output power at P1dB with gain of 14 dB and 58% power-added efficiency at 1 dB compression. This performance makes the QPD2025D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection. Lead-free and RoHS compliant.

Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2025D typically provides 24 dBm of output power at P1dB with gain of 14 dB and 58% power-added efficiency at 1 dB compression. This performance makes the QPD2025D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.
Lead-free and RoHS compliant.

Supplier's Site Datasheet
RF FETs, MOSFETs - 2312-QPD2025D-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
2312-QPD2025D-ND
RF FETs, MOSFETs 2312-QPD2025D-ND
0.25 MM PWR PHEMT

0.25 MM PWR PHEMT

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Technical Specifications

  Qorvo DigiKey
Product Category RF Transistors Transistors
Product Number QPD2025D 2312-QPD2025D-ND
Product Name DC - 20 GHz, 250 um Discrete GaAs pHEMT Die RF FETs, MOSFETs
Transistor Type PHEMT
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