Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The QPD2025D typically provides 24 dBm of output power at P1dB with gain of 14 dB and 58% power-added efficiency at 1 dB compression. This performance makes the QPD2025D appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.
Lead-free and RoHS compliant.
| Qorvo | DigiKey | |
|---|---|---|
| Product Category | RF Transistors | Transistors |
| Product Number | QPD2025D | 2312-QPD2025D-ND |
| Product Name | DC - 20 GHz, 250 um Discrete GaAs pHEMT Die | RF FETs, MOSFETs |
| Transistor Type | PHEMT | |
| Transistor Technology / Material | DC - 20 GHz, 250 um Discrete GaAs pHEMT Die | |
| Transistor Grade / Operating Range | Military |
