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Qorvo's UF3C065080B7S 650 V, 85 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the D2PAK-7L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.
SICFET N-CH 650V 27A D2PAK-7
N-Channel 650V 27A (Tc) 136.4W (Tc) Surface Mount D2PAK-7
N-Channel 650V 27A (Tc) 136.4W (Tc) Surface Mount D2PAK-7
N-Channel 650V 27A (Tc) 136.4W (Tc) Surface Mount D2PAK-7
| Qorvo | Acme Chip Technology Co., Limited | DigiKey | |
|---|---|---|---|
| Product Category | RF Transistors | RF Transistors | Transistors |
| Product Number | UF3C065080B7S | UF3C065080B7S | 2312-UF3C065080B7STR-ND |
| Product Name | 650 V, 85 mohm SiC FET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Transistor Technology / Material | 650 V, 85 mohm SiC FET |
