onsemi P-Channel -60V -38A MOSFET Transistor 2SJ661-1E

Description
P-Channel Power MOSFET -60V, -38A, 39mΩ P-Channel Power MOSFET, -60V, -38A, 39mOhm, 50-TUBE Product overview: 2SJ661-1E from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -60V, -38A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, -38A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SJ661-1E can be used for catalog matching and distributor lookup.
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Description
P-Channel Power MOSFET -60V, -38A, 39mΩ P-Channel Power MOSFET, -60V, -38A, 39mOhm, 50-TUBE Product overview: 2SJ661-1E from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -60V, -38A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, -38A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SJ661-1E can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore
P-Channel -60V -38A MOSFET Transistor
278-2SJ661-1E
P-Channel -60V -38A MOSFET Transistor 278-2SJ661-1E
P-Channel Power MOSFET -60V, -38A, 39mΩ P-Channel Power MOSFET, -60V, -38A, 39mOhm, 50-TUBE Product overview: 2SJ661-1E from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -60V, -38A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, -38A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SJ661-1E can be used for catalog matching and distributor lookup.

P-Channel Power MOSFET -60V, -38A, 39mΩ P-Channel Power MOSFET, -60V, -38A, 39mOhm, 50-TUBE Product overview: 2SJ661-1E from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -60V, -38A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, -38A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SJ661-1E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 2SJ661-1E-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2SJ661-1E-ND
Single FETs, MOSFETs 2SJ661-1E-ND
P-Channel 60V 38A (Ta) 1.65W (Ta), 65W (Tc) Through Hole TO-262-3

P-Channel 60V 38A (Ta) 1.65W (Ta), 65W (Tc) Through Hole TO-262-3

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 - 2SJ661-1E - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor

Power Field-Effect Transistor

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ661-1E - 1004692-2SJ661-1E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ661-1E
1004692-2SJ661-1E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ661-1E 1004692-2SJ661-1E
Manufacturer: ON Semiconductor Win Source Part Number: 1004692-2SJ661-1E Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.65W (Ta), 65W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-262-3 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 38A (Ta) Max Gate Charge: 80nC @ 10V Max Input Capacitance: 4360pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 39 mOhm @ 19A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 1004692-2SJ661-1E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.65W (Ta), 65W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-262-3
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 38A (Ta)
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 4360pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 39 mOhm @ 19A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SJ661-1E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SJ661-1E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SJ661-1E
MOSFET P-CH 60V 38A TO262-3

MOSFET P-CH 60V 38A TO262-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET PCH 4V DRIVE SERIES

MOSFET PCH 4V DRIVE SERIES

Buy Now Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-2SJ661-1E 2SJ661-1E-ND 2SJ661-1E 1004692-2SJ661-1E 2SJ661-1E 2SJ661-1E
Product Name P-Channel -60V -38A MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ661-1E Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel; P-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA TO-262-3 SOT3; TO-262-3 TO-262-3 Long Leads, I2PAK, TO-262AA
Packing Method Tube; Tube Rail; Tube; Tube/Rail Tube; Tube
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