onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SJ661-1E 2SJ661-1E

Manufacturer: ON Semiconductor
Win Source Part Number: 1004692-2SJ661-1E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.65W (Ta), 65W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-262-3
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 38A (Ta)
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 4360pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 39 mOhm @ 19A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Sufficient

P-Channel Power MOSFET -60V, -38A, 39mΩ P-Channel Power MOSFET, -60V, -38A, 39mOhm, 50-TUBE Product overview: 2SJ661-1E from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -60V, -38A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -60V, -38A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SJ661-1E can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor

P-Channel 60V 38A (Ta) 1.65W (Ta), 65W (Tc) Through Hole TO-262-3