Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK1838L-E 2SK1838L-E

The 2SK1838L-E is a silicon N-channel MOSFET designed for high-speed power switching in applications such as switching regulators and DC-DC converters. It comes in a DPAK(L)-(1) package, measuring 6.5 mm × 5.5 mm, with a typical mass of 0.42 g. The device has a drain-to-source voltage rating of 250 V, a continuous drain current of 1 A, and a peak pulse current of 2 A. Its static drain-to-source on-state resistance is 5.5 Ω to 8.0 Ω at 10 V gate-source voltage and 0.5 A drain current. It features a gate-to-source breakdown voltage of ±30 V, a channel dissipation of 10 W at Tc = 25°C, and a maximum channel temperature of 150°C. The MOSFET meets RoHS standards and is classified as "Standard" quality grade per Renesas Electronics product grading.