Nexperia B.V. 50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = open PUMH4-QX

Description
NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD4-Q PNP/PNP complement: PUMB4-Q Features and benefits Built-in bias resistors Simplified circuit design Reduction of component count Reduced pick and place costs Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Low current peripheral driver Replacement of general purpose transistors in digital applications Control of IC inputs
  • 50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = open - PUMH4-QX - Nexperia B.V.
    Nexperia B.V.
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Description
NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD4-Q PNP/PNP complement: PUMB4-Q Features and benefits Built-in bias resistors Simplified circuit design Reduction of component count Reduced pick and place costs Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Low current peripheral driver Replacement of general purpose transistors in digital applications Control of IC inputs
Request a Quote
Datasheet
Datasheet Summary
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NPN/NPN Resistor-Equipped Transistor (RET) in a small SOT363 (SC-88) SMD plastic package, rated for 50 V collector-emitter voltage and 100 mA output current per transistor, with a built-in 10 kΩ bias resistor on each input. The device complies with AEC-Q101 and is suited for automotive applications. Total power dissipation is 300 mW at 25 °C ambient temperature, with a maximum junction temperature of 150 °C.

Datasheet Summary
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NPN/NPN Resistor-Equipped Transistor (RET) in a small SOT363 (SC-88) SMD plastic package, rated for 50 V collector-emitter voltage and 100 mA output current per transistor, with a built-in 10 kΩ bias resistor on each input. The device complies with AEC-Q101 and is suited for automotive applications. Total power dissipation is 300 mW at 25 °C ambient temperature, with a maximum junction temperature of 150 °C.

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50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = open - PUMH4-QX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = open
PUMH4-QX
50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = open PUMH4-QX
NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PUMD4-Q PNP/PNP complement: PUMB4-Q Features and benefits Built-in bias resistors Simplified circuit design Reduction of component count Reduced pick and place costs Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Low current peripheral driver Replacement of general purpose transistors in digital applications Control of IC inputs

NPN/NPN Resistor-Equipped Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package.

NPN/PNP complement: PUMD4-Q

PNP/PNP complement: PUMB4-Q

Features and benefits

  • Built-in bias resistors
  • Simplified circuit design
  • Reduction of component count
  • Reduced pick and place costs
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Low current peripheral driver
  • Replacement of general purpose transistors in digital applications
  • Control of IC inputs
Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V.
Product Category Transistors
Product Number PUMH4-QX
Product Name 50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = open
Package Type SOT363 SOT363
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