Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 60V 300mA (Tc) 830mW (Tc) Surface Mount TO-236AB
N-Channel 60V 300mA (Tc) 830mW (Tc) Surface Mount TO-236AB
N-Channel 60V 300mA (Tc) 830mW (Tc) Surface Mount TO-236AB
MOSFET, DUAL N-CH, 60V, 0.32A, TSSOP ROHS COMPLIANT: YES
MOSFET 2N-CH 60V 0.32A 6TSSOP
| Nexperia B.V. | DigiKey | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2N7002HSX | 1727-2N7002HSXCT-ND | 26AK4077 | 2N7002HSX | 2N7002HSX |
| Product Name | 60 V, dual N-channel Trench MOSFET | FET, MOSFET Arrays | Mosfet, Dual N-Ch, 60V, 0.32A, Tssop Rohs Compliant Nexperia | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 60 volts | 60 volts | |||
| IDSS | 320000 milliamps | 320 milliamps | |||
| VGS(off) | 20 volts | ||||
| PD | 280 milliwatts |
