50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ
TRANS PREBIAS 1NPN 1PNP 6-TSSOP
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 230MHz, 180MHz 200mW Surface Mount 6-TSSOP
TRANS PREBIAS 1NPN 1PNP 6-TSSOP
TRANS PREBIAS 1NPN 1PNP 6TSSOP Product overview: PUMD9-QX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PUMD9-QX can be used for catalog matching and distributor lookup.
Win Source Part Number: 1377108-PUMD9-QX
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased
Package: Tape & Reel
Fake Threat In the Open Market: 56 pct.
MSL Level: 1 (Unlimited)
Mfr: Nexperia USA Inc.
Series: Automotive, AEC-Q101
Product Status: Active
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP
Base Product Number: PUMD9
Mounting Type: Surface Mount
HTSUS: 8541.21.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 230MHz, 180MHz
Power - Max: 200mW
TRANS PREBIAS 1NPN 1PNP 6TSSOP
TRANS PREBIAS 1NPN 1PNP 6TSSOP
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | PUMD9-QX | 1727-PUMD9-QXDKR-ND | 293-PUMD9-QX | 1377108-PUMD9-QX | PUMD9-QX | PUMD9-QX |
| Product Name | 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ | Bipolar Transistor Arrays, Pre-Biased | Bipolar Transistor | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased | Bipolar Transistor Arrays, Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Package Type | SOT363-3 SOT363-3 | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | SOT3 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
| Polarity | NPN; PNP | NPN; PNP | NPN; PNP | 1 NPN, 1 PNP - Pre-Biased (Dual); NPN; PNP | ||
| Transistor Grade / Operating Range | Automotive | |||||
| Packing Method | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR) | ||||
| IC(max) | 100000 milliamps | 100 milliamps | 100 milliamps |
