60 V, 2 A PNP/PNP low VCEsat double transistor in a leadless DFN2020D-6 (SOT1118D) surface-mounted package measuring 2 mm x 2 mm x 0.65 mm, with an exposed heat sink for enhanced thermal conductivity. It has a collector-emitter saturation voltage of 310 mΩ at I_C = -1 A and I_B = -50 mA, with a peak collector current of 3 A and a total power dissipation of up to 960 mW when mounted on a 4-layer PCB with a 1 cm² collector pad. The device is qualified to AEC-Q101 for automotive applications.
PNP/PNP low VCEsat double transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
NPN/NPN complement: PBSS4260PANS-Q
Features and benefits
Applications
| Nexperia B.V. | |
|---|---|
| Product Category | Transistors |
| Product Number | PBSS5260PAPS-QX |
| Product Name | 60 V, 2 A PNP/PNP low VCEsat double transistor |
| Package Type | SOT1118D SOT1118D |
