Nexperia B.V. 60 V, 360 mA N-channel Trench MOSFET 2N7002P,235

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60 V, 360 mA N-channel Trench MOSFET - 2N7002P,235 - Nexperia B.V.
Nijmegen, Netherlands
60 V, 360 mA N-channel Trench MOSFET
2N7002P,235
60 V, 360 mA N-channel Trench MOSFET 2N7002P,235
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified Applications Relay driver High-speed line driver Low-side load switch Switching circuits

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Logic-level compatible
  • Very fast switching
  • Trench MOSFET technology
  • AEC-Q101 qualified

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
Supplier's Site Datasheet
Discrete Semiconductor - 2N7002P,235 - LIXINC Electronics Co., Limited
Hong Kong, China
Discrete Semiconductor
2N7002P,235
Discrete Semiconductor 2N7002P,235
MOSFET N-CH 60V 360MA TO236AB

MOSFET N-CH 60V 360MA TO236AB

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002P,235 - 1004062-2N7002P,235 - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002P,235
1004062-2N7002P,235
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002P,235 1004062-2N7002P,235
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1004062-2N7002P,235 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 350mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 360mA (Ta) Gate-Source Threshold Voltage: 2.4V @ 250μA Max Gate Charge: 0.8nC @ 4.5V Max Input Capacitance: 50pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.6 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1004062-2N7002P,235
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 350mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 360mA (Ta)
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 0.8nC @ 4.5V
Max Input Capacitance: 50pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.6 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-1865-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1865-2-ND
Single FETs, MOSFETs 1727-1865-2-ND
N-Channel 60V 360mA (Ta) 350mW (Ta) Surface Mount TO-236AB

N-Channel 60V 360mA (Ta) 350mW (Ta) Surface Mount TO-236AB

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-1865-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1865-1-ND
Single FETs, MOSFETs 1727-1865-1-ND
N-Channel 60V 360mA (Ta) 350mW (Ta) Surface Mount TO-236AB

N-Channel 60V 360mA (Ta) 350mW (Ta) Surface Mount TO-236AB

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-1865-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-1865-6-ND
Single FETs, MOSFETs 1727-1865-6-ND
N-Channel 60V 360mA (Ta) 350mW (Ta) Surface Mount TO-236AB

N-Channel 60V 360mA (Ta) 350mW (Ta) Surface Mount TO-236AB

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2N7002P,235 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2N7002P,235
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2N7002P,235
MOSFET N-CH 60V 360MA TO236AB

MOSFET N-CH 60V 360MA TO236AB

Supplier's Site

Technical Specifications

  Nexperia B.V. LIXINC Electronics Co., Limited Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 2N7002P,235 2N7002P,235 1004062-2N7002P,235 1727-1865-2-ND 2N7002P,235
Product Name 60 V, 360 mA N-channel Trench MOSFET Discrete Semiconductor TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002P,235 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
Package Type SOT23; SOT23 SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; TO-236AB (SOT23) SOT23; TO-236-3, SC-59, SOT-23-3 0.8 nC @ 4.5 V
PD 350 milliwatts 350 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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