N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel MOSFET, 60V, 360mA, TO-236 3-Pin Product overview: 2N7002P,235 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 360mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 360mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N7002P,235 can be used for catalog matching and distributor lookup.
N-Channel 60V 360mA (Ta) 350mW (Ta) Surface Mount TO-236AB
N-Channel 60V 360mA (Ta) 350mW (Ta) Surface Mount TO-236AB
N-Channel 60V 360mA (Ta) 350mW (Ta) Surface Mount TO-236AB
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1004062-2N7002P,235
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 350mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 360mA (Ta)
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 0.8nC @ 4.5V
Max Input Capacitance: 50pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.6 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
MOSFET N-CH 60V 360MA TO236AB
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 2N7002P,235 | 278-2N7002P,235 | 1727-1865-1-ND | 1004062-2N7002P,235 | 2N7002P,235 |
| Product Name | 60 V, 360 mA N-channel Trench MOSFET | N-Channel 60V 360mA MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002P,235 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||||
| V(BR)DSS | 60 volts | 60 volts | |||
| IDSS | 360000 milliamps | ||||
| VGS(off) | 20 volts | ||||
| PD | 350 milliwatts | 350 milliwatts |
