30 V, 2 A PNP/PNP low VCEsat double transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package, measuring 2 mm x 2 mm x 0.65 mm. The device has a collector-emitter saturation voltage of up to 420 mV at 2 A and 100 mA base current, with a saturation resistance of 195 mΩ. It supports continuous collector current of 2 A and peak pulse current of 3 A, and offers DC current gain hFE from 100 to 370 depending on operating conditions. The part is qualified to AEC-Q101 for automotive applications. The NPN/NPN complement is PBSS4230PAN-Q.
PNP/PNP low VCEsat double transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
NPN/NPN complement: PBSS4230PAN-Q
Features and benefits
Applications
| Nexperia B.V. | |
|---|---|
| Product Category | Transistors |
| Product Number | PBSS5230PAP-QX |
| Product Name | 30 V, 2 A PNP/PNP low VCEsat double transistor |
| Package Type | SOT1118 SOT1118 |
