N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1004052-2N7002BK,215
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 370mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 350mA (Ta)
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 0.6nC @ 4.5V
Max Input Capacitance: 50pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.6 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
MOSFET N-CH 60V 0.35A 3-Pin SOT-23 Product overview: 2N7002BK,215 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.35A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.35A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N7002BK,215 can be used for catalog matching and distributor lookup.
N-Channel 60V 350mA (Ta) 370mW (Ta) Surface Mount TO-236AB
N-Channel 60V 350mA (Ta) 370mW (Ta) Surface Mount TO-236AB
N-Channel 60V 350mA (Ta) 370mW (Ta) Surface Mount TO-236AB
MOSFET N-CH 60V 350MA TO236AB
MOSFET N-CH 60V 350MA TO236AB
60V 350mA 1.6Ω@10V,500mA 370mW 2.1V@250uA N Channel SOT-23 MOSFETs ROHS
MOSFET, N-CH, 60V, 0.35A, 0.37W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:350mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V RoHS Compliant: Yes
| Nexperia B.V. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2N7002BK,215 | 1004052-2N7002BK,215 | 278-2N7002BK,215 | 1727-4789-1-ND | 2N7002BK,215 | 2N7002BK,215 | 2N7002BK,215 | 28T0305 |
| Product Name | 60 V, 350 mA N-channel Trench MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7002BK,215 | 60V 0.35A SOT-23 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, N-Ch, 60V, 0.35A, 0.37W; Channel Type Nexperia |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | 60 volts | ||||
| IDSS | 350000 milliamps | 350 milliamps | 350 milliamps | |||||
| VGS(off) | 20 volts | 2.1 volts | ||||||
| PD | 370 milliwatts | 370 milliwatts | 370 milliwatts | 370 milliwatts |
