Nexperia B.V. 20 V, 5.8 A NPN low VCEsat transistor PBSS302NZ-QF

Description
NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Qualified according to AEC-Q101 and recommended for use in automotive applications Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans)
Request a Quote Datasheet
Description
NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Qualified according to AEC-Q101 and recommended for use in automotive applications Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
20 V, 5.8 A NPN low VCEsat transistor - PBSS302NZ-QF - Nexperia B.V.
Nijmegen, Netherlands
20 V, 5.8 A NPN low VCEsat transistor
PBSS302NZ-QF
20 V, 5.8 A NPN low VCEsat transistor PBSS302NZ-QF
NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Qualified according to AEC-Q101 and recommended for use in automotive applications Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans)

NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

Features and benefits

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • DC-to-DC conversion
  • MOSFET gate driving
  • Motor control
  • Charging circuits
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet
Single Bipolar Transistors - 1727-PBSS302NZ-QFTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS302NZ-QFTR-ND
Single Bipolar Transistors 1727-PBSS302NZ-QFTR-ND
PBSS302NZ-Q/SOT223/S C-73

PBSS302NZ-Q/SOT223/SC-73

Buy Now Datasheet

Technical Specifications

  Nexperia B.V. DigiKey
Product Category Transistors Transistors
Product Number PBSS302NZ-QF 1727-PBSS302NZ-QFTR-ND
Product Name 20 V, 5.8 A NPN low VCEsat transistor Single Bipolar Transistors
Package Type SOT223; SOT223 SOT223
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