Nexperia B.V. 650 V, 40 A trench field-stop IGBT with full rated silicon diode NGW40T65M3DFP/A00Q

Description
The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠⁠-⁠⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-⁠circuit withstand time of 5 μs. This hard⁠-⁠switching 650 V, 40 A IGBT is optimized for high⁠-⁠voltage, high⁠-⁠frequency industrial power inverter applications and servo motor drive applications. Applications Motor drives for industrial and consumer appliances Servo motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating grippers, in-line manufacturing, etc. Power inverters, such as Uninterruptible Power Supply (UPS) inverter EV charging converter Induction heating Welding
  • 650 V, 40 A trench field-stop IGBT with full rated silicon diode - NGW40T65M3DFP/A00Q - Nexperia B.V.
    Nexperia B.V.
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Description
The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠⁠-⁠⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-⁠circuit withstand time of 5 μs. This hard⁠-⁠switching 650 V, 40 A IGBT is optimized for high⁠-⁠voltage, high⁠-⁠frequency industrial power inverter applications and servo motor drive applications. Applications Motor drives for industrial and consumer appliances Servo motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating grippers, in-line manufacturing, etc. Power inverters, such as Uninterruptible Power Supply (UPS) inverter EV charging converter Induction heating Welding
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Datasheet
Datasheet Summary
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The NGW40T65M3DFP is a 650 V, 40 A trench field-stop IGBT with a fully rated silicon diode, packaged in a TO-247-3 through-hole case with a heatsink-mounted mounting base. It supports a maximum junction temperature of 175 °C and has a short-circuit withstand time of 5 μs. The device is HV-H3TRB qualified and optimized for high-frequency industrial inverters and servo motor drives. Thermal resistance from junction to case is 0.45-0.53 K/W for the IGBT and 0.71-0.84 K/W for the diode.

Datasheet Summary
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The NGW40T65M3DFP is a 650 V, 40 A trench field-stop IGBT with a fully rated silicon diode, packaged in a TO-247-3 through-hole case with a heatsink-mounted mounting base. It supports a maximum junction temperature of 175 °C and has a short-circuit withstand time of 5 μs. The device is HV-H3TRB qualified and optimized for high-frequency industrial inverters and servo motor drives. Thermal resistance from junction to case is 0.45-0.53 K/W for the IGBT and 0.71-0.84 K/W for the diode.

Suppliers

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650 V, 40 A trench field-stop IGBT with full rated silicon diode - NGW40T65M3DFP/A00Q - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
650 V, 40 A trench field-stop IGBT with full rated silicon diode
NGW40T65M3DFP/A00Q
650 V, 40 A trench field-stop IGBT with full rated silicon diode NGW40T65M3DFP/A00Q
The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠⁠-⁠⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-⁠circuit withstand time of 5 μs. This hard⁠-⁠switching 650 V, 40 A IGBT is optimized for high⁠-⁠voltage, high⁠-⁠frequency industrial power inverter applications and servo motor drive applications. Applications Motor drives for industrial and consumer appliances Servo motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating grippers, in-line manufacturing, etc. Power inverters, such as Uninterruptible Power Supply (UPS) inverter EV charging converter Induction heating Welding

The NGW40T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third⁠⁠-⁠⁠generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW40T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short-⁠circuit withstand time of 5 μs. This hard⁠-⁠switching 650 V, 40 A IGBT is optimized for high⁠-⁠voltage, high⁠-⁠frequency industrial power inverter applications and servo motor drive applications.

Applications

  • Motor drives for industrial and consumer appliances
    • Servo motors operating between 5-20 kW (up to 20 kHz) for robotics, elevators, operating grippers, in-line manufacturing, etc.
  • Power inverters, such as
    • Uninterruptible Power Supply (UPS) inverter
    • EV charging converter
  • Induction heating
  • Welding
Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V.
Product Category Transistors
Product Number NGW40T65M3DFP/A00Q
Product Name 650 V, 40 A trench field-stop IGBT with full rated silicon diode
Package Type SOT429-5 SOT429-5
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