N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
Win Source Part Number: 958982-2N7002NXAKR
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta), 300mA (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 265mW (Ta), 1.33W (Tc)
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Gate Charge (Qg) (Max) @ Vgs: 0.43 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 10 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Nexperia USA Inc.
Other Names: 1727-8643-2,93466128
Base Product Number: 2N7002
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
MOSFET N-CH 60V 190MA TO236AB
N-Channel 60V 190mA (Ta), 300mA (Tc) 265mW (Ta), 1.33W (Tc) Surface Mount TO-236AB
N-Channel 60V 190mA (Ta), 300mA (Tc) 265mW (Ta), 1.33W (Tc) Surface Mount TO-236AB
N-Channel 60V 190mA (Ta), 300mA (Tc) 265mW (Ta), 1.33W (Tc) Surface Mount TO-236AB
MOSFET N-CH 60V 190MA TO236AB
60V 4.5Ω@100mA,10V 2.1V@250uA null SOT-23 MOSFETs ROHS
MOSFET 60 V, single N-channel Trench MOSFET
MOSFET, N CH, 60V, 0.19A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:190mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V; Power RoHS Compliant: Yes
| Nexperia B.V. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2N7002NXAKR | 958982-2N7002NXAKR | 2N7002NXAKR | 1727-8643-2-ND | 2N7002NXAKR | 2N7002NXAKR | 2N7002NXAKR | 29AH8643 |
| Product Name | 55 V, N-channel Trench MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Mosfet, N Ch, 60V, 0.19A, To-263Ab; Transistor Polarity Nexperia |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||||
| IDSS | 300 milliamps | 190 milliamps | 190 milliamps | |||||
| VGS(off) | 1.6 volts | 2.1 volts |
