PNP medium power transistor in an ultra-thin DFN2020D-3 (SOT1061D) leadless SMD package with exposed heat sink for improved thermal and electrical conductivity, rated for a collector-emitter voltage of -60 V, continuous collector current of -1 A, and peak collector current of -2 A. The device includes a base, emitter, and collector pinout, supports Automatic Optical Inspection (AOI), and is suitable for applications including linear voltage regulators, battery-powered devices, and high-side switches. The transistor has a DC current gain range of 63 to 160 at V_CE = -2 V and I_C = -150 mA under pulsed conditions, with a collector-emitter saturation voltage of up to 500 mV at I_C = -500 mA and I_B = -50 mA. Total power dissipation reaches up to 1.1 W under optimal thermal mounting conditions, and the junction temperature range is -55 °C to 150 °C.
PNP medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.
Features and benefits
Applications
Bipolar (BJT) Transistor PNP 60V 1A 145MHz 420mW Surface Mount DFN2020D-3
TRANSISTOR, BIPOLAR, AEC-Q101, PNP, -60V; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency ft:145MHz; Power Dissipation Pd:420mW; DC Collector Current:-1A; DC Current Gain hFE:63hFE; Transistor RoHS Compliant: Yes
Bipolar Transistors - BJT 1A PNP Medium Power Transistors
| Nexperia B.V. | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | BC52-10PASX | 1727-BC52-10PASXTR-ND | 98Y2105 | BC52-10PASX |
| Product Name | 60 V, 1 A PNP medium power transistors | Single Bipolar Transistors | Transistor, Bipolar, Aec-Q101, Pnp, -60V; Transistor Polarity Nexperia | Bipolar Transistors - BJT |
| Package Type | SOT1061D SOT1061D | 3-UDFN Exposed Pad | TO-3 |
