Nexperia B.V. N-channel 40 V, 9.5 mOhm standard level MOSFET in LFPAK33 BUK7M9R5-40HX

Automotive qualified standard level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications.

Features and benefits

• Fully automotive qualified to AEC-Q101 at 175 °C
• Trench 9 superjunction technology:
• Low power losses, high power density

Applications

• 12 V automotive systems
• Powertrain, chassis, body and infotainment applications
• Medium/Low power motor drive
• DC-DC systems
• LED lighting

N-Channel 40V 40A (Ta) 55W (Ta) Surface Mount LFPAK33

N-Channel 40V 40A (Ta) 55W (Ta) Surface Mount LFPAK33

N-Channel 40V 40A (Ta) 55W (Ta) Surface Mount LFPAK33

MOSFET N-CH 40V 40A LFPAK33 Product overview: BUK7M9R5-40HX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK7M9R5-40HX can be used for catalog matching and distributor lookup.

Win Source Part Number: 1356893-BUK7M9R5-40HX
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 44 pct.
MSL Level: 1 (Unlimited)
Mfr: Nexperia USA Inc.
Series: Automotive, AEC-Q101
Package: Tape & Reel
Product Status: Active
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Supplier Device Package: LFPAK33
Base Product Number: BUK7M9
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1166 pF @ 25 V
Power Dissipation (Max): 55W (Ta)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99