Nexperia B.V. 20 V, 2 A PNP medium power transistors BC869-QF

Description
PNP medium power transistor in a SOT89 (SC-62) medium power and flat lead plastic package. Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity Leadless very small SMD plastic package with medium power capability Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOSFET drivers Amplifiers
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Description
PNP medium power transistor in a SOT89 (SC-62) medium power and flat lead plastic package. Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity Leadless very small SMD plastic package with medium power capability Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOSFET drivers Amplifiers
Request a Quote
Datasheet
Datasheet Summary
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PNP medium power transistor in a SOT89 (SC-62) leadless surface-mount package with dimensions of 2.0 x 2.0 x 0.65 mm and an exposed heatsink for enhanced thermal conductivity. It has a collector-emitter voltage rating of -20 V, a continuous collector current of -2 A, and a peak collector current of -3 A. Total power dissipation is up to 1.35 W with a 6 cm² collector pad. The device is qualified to AEC-Q101 for automotive applications. Thermal resistance from junction to ambient is 93 K/W with optimal PCB mounting. DC current gain ranges from 85 to 375 depending on version, with three gain bins available.

Datasheet Summary
Powered by GS/AI

PNP medium power transistor in a SOT89 (SC-62) leadless surface-mount package with dimensions of 2.0 x 2.0 x 0.65 mm and an exposed heatsink for enhanced thermal conductivity. It has a collector-emitter voltage rating of -20 V, a continuous collector current of -2 A, and a peak collector current of -3 A. Total power dissipation is up to 1.35 W with a 6 cm² collector pad. The device is qualified to AEC-Q101 for automotive applications. Thermal resistance from junction to ambient is 93 K/W with optimal PCB mounting. DC current gain ranges from 85 to 375 depending on version, with three gain bins available.

Suppliers

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Supplier Links
20 V, 2 A PNP medium power transistors - BC869-QF - Nexperia B.V.
Nijmegen, Netherlands
20 V, 2 A PNP medium power transistors
BC869-QF
20 V, 2 A PNP medium power transistors BC869-QF
PNP medium power transistor in a SOT89 (SC-62) medium power and flat lead plastic package. Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity Leadless very small SMD plastic package with medium power capability Qualified according to AEC-Q101 and recommended for use in automotive applications Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOSFET drivers Amplifiers

PNP medium power transistor in a SOT89 (SC-62) medium power and flat lead plastic package.

Features and benefits

  • High current
  • Three current gain selections
  • High power dissipation capability
  • Exposed heatsink for excellent thermal and electrical conductivity
  • Leadless very small SMD plastic package with medium power capability
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • Linear voltage regulators
  • High-side switches
  • Battery-driven devices
  • Power management
  • MOSFET drivers
  • Amplifiers
Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V.
Product Category Transistors
Product Number BC869-QF
Product Name 20 V, 2 A PNP medium power transistors
Package Type SOT89; SOT89 SOT89
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