Nexperia B.V. 45 V, 100 mA PNP general purpose double transistor BC857BV,115

Description
PNP double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BC847BV Features and benefits 300 mW total power dissipation Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors Reduces required board space Reduces pick and place costs Applications General purpose switching and amplification
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Description
PNP double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BC847BV Features and benefits 300 mW total power dissipation Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors Reduces required board space Reduces pick and place costs Applications General purpose switching and amplification
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Datasheet
Datasheet Summary
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PNP double transistor in a SOT666 surface-mounted plastic package measuring 1.6 mm x 1.2 mm x 0.55 mm, with a total power dissipation of 300 mW and a collector-emitter voltage rating of -45 V. Each transistor has a maximum collector current of -100 mA and a DC current gain ranging from 200 to 450 at -5 V and -2 mA. The device is intended for general purpose switching and amplification applications and is compatible with reflow soldering.

Datasheet Summary
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PNP double transistor in a SOT666 surface-mounted plastic package measuring 1.6 mm x 1.2 mm x 0.55 mm, with a total power dissipation of 300 mW and a collector-emitter voltage rating of -45 V. Each transistor has a maximum collector current of -100 mA and a DC current gain ranging from 200 to 450 at -5 V and -2 mA. The device is intended for general purpose switching and amplification applications and is compatible with reflow soldering.

Suppliers

Company
Product
Description
Supplier Links
45 V, 100 mA PNP general purpose double transistor - BC857BV,115 - Nexperia B.V.
Nijmegen, Netherlands
45 V, 100 mA PNP general purpose double transistor
BC857BV,115
45 V, 100 mA PNP general purpose double transistor BC857BV,115
PNP double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: BC847BV Features and benefits 300 mW total power dissipation Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors Reduces required board space Reduces pick and place costs Applications General purpose switching and amplification

PNP double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package.

NPN complement: BC847BV

Features and benefits

  • 300 mW total power dissipation
  • Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package
  • Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors
  • Reduces required board space
  • Reduces pick and place costs

Applications

  • General purpose switching and amplification
Supplier's Site Datasheet
Bipolar Transistors - 6571902 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
6571902
Bipolar Transistors 6571902
PNP Double Transistor,45V,100mA ,BC857BV

PNP Double Transistor,45V,100mA,BC857BV

Supplier's Site
Bipolar Transistors - 1660592 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
1660592
Bipolar Transistors 1660592
PNP Double Transistor,45V,100mA ,BC857BV

PNP Double Transistor,45V,100mA,BC857BV

Supplier's Site
Singapore, Singapore
Dual Bipolar Transistor
277-BC857BV,115
Dual Bipolar Transistor 277-BC857BV,115
PNP BJT Transistor, Dual, 6-Pin SOT Product overview: BC857BV,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-BC857BV,115 can be used for catalog matching and distributor lookup.

PNP BJT Transistor, Dual, 6-Pin SOT Product overview: BC857BV,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-BC857BV,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - BC857BV,115 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays - 1152359-BC857BV,115 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays
1152359-BC857BV,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays 1152359-BC857BV,115
Win Source Part Number: 1152359-BC857BV,115 Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays Series: Automotive, AEC-Q101 Package: Tape & Reel Standard Package: 4,000 Mounting: SMD (SMT) Power - Max: 200mW Voltage - Collector Emitter Breakdown (Max): 45V Current - Collector (Ic) (Max): 100mA Transistor Type: 2 PNP (Dual) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666 Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): "BC857BV,115"; BC857BV 115; BC857BV115; ECCN: EAR99 Fake Threat In the Open Market: 59 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Mfr: Nexperia USA Inc. Other Names: BC857BV T/R,568-11094-1-ND,9 34056711115,BC857BV T/R-ND,568-11094-2-N D,568-11094-1,1727-1 567-2,568-11094-2,17 27-1567-1,568-11094- 6,BC857BV,115-ND,172 7-1567-6,568-11094-6 -ND,NEXNEXBC857BV,11 5,2156-BC857BV,115-N EX Base Product Number: BC857 Product Status: Not For New Designs

Win Source Part Number: 1152359-BC857BV,115
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Series: Automotive, AEC-Q101
Package: Tape & Reel
Standard Package: 4,000
Mounting: SMD (SMT)
Power - Max: 200mW
Voltage - Collector Emitter Breakdown (Max): 45V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): "BC857BV,115"; BC857BV 115; BC857BV115;
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: Nexperia USA Inc.
Other Names: BC857BV T/R,568-11094-1-ND,934056711115,BC857BV T/R-ND,568-11094-2-ND,568-11094-1,1727-1567-2,568-11094-2,1727-1567-1,568-11094-6,BC857BV,115-ND,1727-1567-6,568-11094-6-ND,NEXNEXBC857BV,115,2156-BC857BV,115-NEX
Base Product Number: BC857
Product Status: Not For New Designs

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-1567-6-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-1567-6-ND
Bipolar Transistor Arrays 1727-1567-6-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 45V 100mA 100MHz 200mW Surface Mount SOT-666

Bipolar (BJT) Transistor Array 2 PNP (Dual) 45V 100mA 100MHz 200mW Surface Mount SOT-666

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-1567-1-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-1567-1-ND
Bipolar Transistor Arrays 1727-1567-1-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 45V 100mA 100MHz 200mW Surface Mount SOT-666

Bipolar (BJT) Transistor Array 2 PNP (Dual) 45V 100mA 100MHz 200mW Surface Mount SOT-666

Buy Now Datasheet
Bipolar Transistor Arrays - 1727-1567-2-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
1727-1567-2-ND
Bipolar Transistor Arrays 1727-1567-2-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 45V 100mA 100MHz 200mW Surface Mount SOT-666

Bipolar (BJT) Transistor Array 2 PNP (Dual) 45V 100mA 100MHz 200mW Surface Mount SOT-666

Buy Now Datasheet
Bipolar (Bjt) Array Transistor, Pnp, -45 V, 200 Mw, -100 Ma, 200, Sot-666 Rohs Compliant Nexperia - 93X3925 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Array Transistor, Pnp, -45 V, 200 Mw, -100 Ma, 200, Sot-666 Rohs Compliant Nexperia
93X3925
Bipolar (Bjt) Array Transistor, Pnp, -45 V, 200 Mw, -100 Ma, 200, Sot-666 Rohs Compliant Nexperia 93X3925
Bipolar (BJT) Array Transistor, PNP, -45 V, 200 mW, -100 mA, 200, SOT-666 RoHS Compliant: Yes

Bipolar (BJT) Array Transistor, PNP, -45 V, 200 mW, -100 mA, 200, SOT-666 RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC857BV,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC857BV,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC857BV,115
TRANS 2PNP 45V 0.1A SOT666

TRANS 2PNP 45V 0.1A SOT666

Supplier's Site
TRANS 2PNP 45V 0.1A SOT666 - 554-BC857BV,115 - Utmel Electronic Limited
Hong Kong, China
TRANS 2PNP 45V 0.1A SOT666
554-BC857BV,115
TRANS 2PNP 45V 0.1A SOT666 554-BC857BV,115
TRANS 2PNP 45V 0.1A SOT666

TRANS 2PNP 45V 0.1A SOT666

Supplier's Site
Bipolar Transistor Arrays - BC857BV,115 - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
BC857BV,115
Bipolar Transistor Arrays BC857BV,115
TRANS 2PNP 45V 0.1A SOT666

TRANS 2PNP 45V 0.1A SOT666

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. RS Components, Ltd. ERSAELECTRONICS PTE. LTD. Rochester Electronics Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited ODG (Origin Data Global)
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number BC857BV,115 6571902 277-BC857BV,115 BC857BV,115 1152359-BC857BV,115 1727-1567-6-ND 93X3925 BC857BV,115 554-BC857BV,115 BC857BV,115
Product Name 45 V, 100 mA PNP general purpose double transistor Bipolar Transistors Dual Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays Bipolar Transistor Arrays Bipolar (Bjt) Array Transistor, Pnp, -45 V, 200 Mw, -100 Ma, 200, Sot-666 Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - Bipolar (BJT) TRANS 2PNP 45V 0.1A SOT666 Bipolar Transistor Arrays
Package Type SOT666 SOT666 Ssmini SOT666 SOT3 SOT-563, SOT-666 TO-3 AEC-Q101 SOT-563, SOT-666
Polarity PNP PNP PNP PNP PNP PNP; PNP 2 PNP (Dual); PNP
Number of units in IC 2
TJ -65 C (-85 F) 150 C (302 F) 150 C (302 F)
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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