Mini-Circuits SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 2000 MHz, 50Ω, SOT-143 Style Package VAM-7+

Description
VAM-7+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot. It is enclosed in an SOT143 style package. It uses Darlington configuration and is fabricated using InGaP HBT technology. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN GND RF-IN RF-IN 4 1 3 2 GROUND RF-OUT & DC-IN GND Function Pin Number Description RF-IN 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper RF-OUT and DC-IN 3 operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Recommended Application Circuit”. Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path GND 2,4 inductance for best performance. REV. D ECO-025096 VAM-7+ MCL NY 250402 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.c om PAGE 1 OF 4 MMIC SURFACE MOUNT Monolithic Amplifier VAM-7+ 50Ω DC to 2 GHz
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Description
VAM-7+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot. It is enclosed in an SOT143 style package. It uses Darlington configuration and is fabricated using InGaP HBT technology. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN GND RF-IN RF-IN 4 1 3 2 GROUND RF-OUT & DC-IN GND Function Pin Number Description RF-IN 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper RF-OUT and DC-IN 3 operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Recommended Application Circuit”. Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path GND 2,4 inductance for best performance. REV. D ECO-025096 VAM-7+ MCL NY 250402 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.c om PAGE 1 OF 4 MMIC SURFACE MOUNT Monolithic Amplifier VAM-7+ 50Ω DC to 2 GHz
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SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 2000 MHz, 50Ω, SOT-143 Style Package - VAM-7+ - Mini-Circuits
Brooklyn, NY, United States
SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 2000 MHz, 50Ω, SOT-143 Style Package
VAM-7+
SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 2000 MHz, 50Ω, SOT-143 Style Package VAM-7+
VAM-7+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot. It is enclosed in an SOT143 style package. It uses Darlington configuration and is fabricated using InGaP HBT technology. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN GND RF-IN RF-IN 4 1 3 2 GROUND RF-OUT & DC-IN GND Function Pin Number Description RF-IN 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper RF-OUT and DC-IN 3 operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Recommended Application Circuit”. Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path GND 2,4 inductance for best performance. REV. D ECO-025096 VAM-7+ MCL NY 250402 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.c om PAGE 1 OF 4 MMIC SURFACE MOUNT Monolithic Amplifier VAM-7+ 50Ω DC to 2 GHz

VAM-7+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot. It is enclosed in an SOT143 style package. It uses Darlington configuration and is fabricated using InGaP HBT technology. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN GND RF-IN RF-IN 4 1 3 2 GROUND RF-OUT & DC-IN GND Function Pin Number Description RF-IN 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper RF-OUT and DC-IN 3 operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Recommended Application Circuit”. Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path GND 2,4 inductance for best performance. REV. D ECO-025096 VAM-7+ MCL NY 250402 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 1 OF 4 MMIC SURFACE MOUNT Monolithic Amplifier VAM-7+ 50Ω DC to 2 GHz

Supplier's Site Datasheet

Technical Specifications

  Mini-Circuits
Product Category RF Amplifiers
Product Number VAM-7+
Product Name SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 2000 MHz, 50Ω, SOT-143 Style Package
RoHS Compliant RoHS
Operating Temperature -20 to 85 C (-4 to 185 F)
Frequency Range 2000 MHz
Minimum Gain 7.8 dB
Maximum Gain 13 dB
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