RAM-3+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot. It is enclosed in a ceramic surface-mount package. RAM-3+ uses Darlington configuration and is fabricated using InGaP HBT technology. Expected MTBF is 900 years at +100°C case temperature. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN RF-IN RF-IN 1 GND GND 2 4 3 GROUND RF-OUT and DC-IN Function Pin Number Description RF-IN 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper RF-OUT and DC-IN 3 operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Recommended Application Circuit”. Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path GND 2,4 inductance for best performance. REV. E ECO-024944 RAM-3+ MCL NY 250320 www.minicircuits.com
SMT RF GBA, DC - 2000 MHZ, 50
| Mini-Circuits | DigiKey | |
|---|---|---|
| Product Category | RF Amplifiers | RF Amplifiers |
| Product Number | RAM-3+ | 3157-RAM-3+TR-ND |
| Product Name | SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 2000 MHz, 50Ω, Ceramic | RF Amplifiers |
| RoHS Compliant | RoHS | |
| Operating Temperature | -54 to 100 C (-65 to 212 F) | |
| Frequency Range | 2000 MHz | 0.0 to 2000 MHz |
| Minimum Gain | 8.02 dB | 10.5 dB |
| Maximum Gain | 12.5 dB | 10.5 dB |
