VAM-3+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot. It is enclosed in an SOT143 style package. It uses Darlington configuration and is fabricated using InGaP HBT technology. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN GND RF-IN RF-IN 4 1 3 2 GROUND RF-OUT & DC-IN GND Function Pin Number Description RF-IN 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper RF-OUT and DC-IN 3 operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Recommended Application Circuit”. Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path GND 2,4 inductance for best performance. REV. E ECO-025096 VAM-3+ MCL NY 250402 www.minicircuits.com
| Mini-Circuits | |
|---|---|
| Product Category | RF Amplifiers |
| Product Number | VAM-3+ |
| Product Name | SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 2000 MHz, 50Ω, SOT-143 Style Package |
| RoHS Compliant | RoHS |
| Operating Temperature | -20 to 85 C (-4 to 185 F) |
| Frequency Range | 2000 MHz |
| Minimum Gain | 7.5 dB |
| Maximum Gain | 11.5 dB |
