Mini-Circuits SMT MMIC, Low Noise, Medium Power, Linear, pHEMT Transistor, 45 MHz to 6000 MHz, 3x3 mm QFN Style Package TAV-581+

Description
TAV-581+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly below 2.5 GHz, and when combining this noise figure with high IP3 performance in a single device it makes it an ideal amplifier for demanding base station applications. We offer these units assembled into a complete module, 50Ω in/out, noise matched and fully specified. For more information please see our TAMP family of models on our web site. SIMPLIFIED SCHEMATIC AND PAD DESCRIPTION DRAIN GATE GATE SOURCE SOURCE SOURCE DRAIN Function Pad Number Description Source 2 & 4 Source terminal, normally connected to ground Gate 3 Gate used for RF input Drain 1 Drain used for RF output * Enhancement mode Pseudomorphic High Electron Mobility Transistor. REV. D ECO-011337 TAV-581+ 220112 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.c om PAGE 1 OF 11 ULTRA LOW NOISE, MEDIUM CURRENT E-PHEMT Transistor TAV-581+
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Description
TAV-581+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly below 2.5 GHz, and when combining this noise figure with high IP3 performance in a single device it makes it an ideal amplifier for demanding base station applications. We offer these units assembled into a complete module, 50Ω in/out, noise matched and fully specified. For more information please see our TAMP family of models on our web site. SIMPLIFIED SCHEMATIC AND PAD DESCRIPTION DRAIN GATE GATE SOURCE SOURCE SOURCE DRAIN Function Pad Number Description Source 2 & 4 Source terminal, normally connected to ground Gate 3 Gate used for RF input Drain 1 Drain used for RF output * Enhancement mode Pseudomorphic High Electron Mobility Transistor. REV. D ECO-011337 TAV-581+ 220112 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.c om PAGE 1 OF 11 ULTRA LOW NOISE, MEDIUM CURRENT E-PHEMT Transistor TAV-581+
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SMT MMIC, Low Noise, Medium Power, Linear, pHEMT Transistor, 45 MHz to 6000 MHz, 3x3 mm QFN Style Package - TAV-581+ - Mini-Circuits
Brooklyn, NY, United States
SMT MMIC, Low Noise, Medium Power, Linear, pHEMT Transistor, 45 MHz to 6000 MHz, 3x3 mm QFN Style Package
TAV-581+
SMT MMIC, Low Noise, Medium Power, Linear, pHEMT Transistor, 45 MHz to 6000 MHz, 3x3 mm QFN Style Package TAV-581+
TAV-581+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly below 2.5 GHz, and when combining this noise figure with high IP3 performance in a single device it makes it an ideal amplifier for demanding base station applications. We offer these units assembled into a complete module, 50Ω in/out, noise matched and fully specified. For more information please see our TAMP family of models on our web site. SIMPLIFIED SCHEMATIC AND PAD DESCRIPTION DRAIN GATE GATE SOURCE SOURCE SOURCE DRAIN Function Pad Number Description Source 2 & 4 Source terminal, normally connected to ground Gate 3 Gate used for RF input Drain 1 Drain used for RF output * Enhancement mode Pseudomorphic High Electron Mobility Transistor. REV. D ECO-011337 TAV-581+ 220112 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.c om PAGE 1 OF 11 ULTRA LOW NOISE, MEDIUM CURRENT E-PHEMT Transistor TAV-581+

TAV-581+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT* technology enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly below 2.5 GHz, and when combining this noise figure with high IP3 performance in a single device it makes it an ideal amplifier for demanding base station applications. We offer these units assembled into a complete module, 50Ω in/out, noise matched and fully specified. For more information please see our TAMP family of models on our web site. SIMPLIFIED SCHEMATIC AND PAD DESCRIPTION DRAIN GATE GATE SOURCE SOURCE SOURCE DRAIN Function Pad Number Description Source 2 & 4 Source terminal, normally connected to ground Gate 3 Gate used for RF input Drain 1 Drain used for RF output * Enhancement mode Pseudomorphic High Electron Mobility Transistor. REV. D ECO-011337 TAV-581+ 220112 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 1 OF 11 ULTRA LOW NOISE, MEDIUM CURRENT E-PHEMT Transistor TAV-581+

Supplier's Site Datasheet

Technical Specifications

  Mini-Circuits
Product Category RF Amplifiers
Product Number TAV-581+
Product Name SMT MMIC, Low Noise, Medium Power, Linear, pHEMT Transistor, 45 MHz to 6000 MHz, 3x3 mm QFN Style Package
Amplifier Type Low Noise Amplifier; Power Amplifier
Operating Temperature -40 to 85 C (-40 to 185 F)
Minimum Gain 8.8 dB
Maximum Gain 22.9 dB
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