Mini-Circuits SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 3000 MHz, 50Ω, Micro-X Style Package ERA-3+

Description
ERA-3+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot. It is enclosed in a Micro-X package. ERA-3+ uses Darlington configuration and is fabricated using InGaP HBT technology. Expected MTTF is 9100 years at 85°C case temperature. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN RF-OUT and DC-IN 3 RF-IN 4 GND GND 2 1 GROUND RF-IN Function Pin Number Description RF-IN 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper RF-OUT and DC-IN 3 operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Recommended Application Circuit”. Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path GND 2,4 inductance for best performance. REV. Q ECO-024740 ERA-3+ MCL NY 250304 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.c om PAGE 1 OF 4 MMIC SURFACE MOUNT Monolithic Amplifier ERA-3+ 50Ω DC to 3 GHz
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Description
ERA-3+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot. It is enclosed in a Micro-X package. ERA-3+ uses Darlington configuration and is fabricated using InGaP HBT technology. Expected MTTF is 9100 years at 85°C case temperature. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN RF-OUT and DC-IN 3 RF-IN 4 GND GND 2 1 GROUND RF-IN Function Pin Number Description RF-IN 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper RF-OUT and DC-IN 3 operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Recommended Application Circuit”. Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path GND 2,4 inductance for best performance. REV. Q ECO-024740 ERA-3+ MCL NY 250304 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.c om PAGE 1 OF 4 MMIC SURFACE MOUNT Monolithic Amplifier ERA-3+ 50Ω DC to 3 GHz
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Suppliers

Company
Product
Description
Supplier Links
SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 3000 MHz, 50Ω, Micro-X Style Package - ERA-3+ - Mini-Circuits
Brooklyn, NY, United States
SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 3000 MHz, 50Ω, Micro-X Style Package
ERA-3+
SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 3000 MHz, 50Ω, Micro-X Style Package ERA-3+
ERA-3+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot. It is enclosed in a Micro-X package. ERA-3+ uses Darlington configuration and is fabricated using InGaP HBT technology. Expected MTTF is 9100 years at 85°C case temperature. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN RF-OUT and DC-IN 3 RF-IN 4 GND GND 2 1 GROUND RF-IN Function Pin Number Description RF-IN 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper RF-OUT and DC-IN 3 operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Recommended Application Circuit”. Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path GND 2,4 inductance for best performance. REV. Q ECO-024740 ERA-3+ MCL NY 250304 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.c om PAGE 1 OF 4 MMIC SURFACE MOUNT Monolithic Amplifier ERA-3+ 50Ω DC to 3 GHz

ERA-3+ (RoHS compliant) is a wideband amplifier offering high dynamic range. It has repeatable performance from lot to lot. It is enclosed in a Micro-X package. ERA-3+ uses Darlington configuration and is fabricated using InGaP HBT technology. Expected MTTF is 9100 years at 85°C case temperature. SIMPLIFIED SCHEMATIC AND PIN DESCRIPTION RF-OUT and DC-IN RF-OUT and DC-IN 3 RF-IN 4 GND GND 2 1 GROUND RF-IN Function Pin Number Description RF-IN 1 RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. RF output and bias pin. DC voltage is present on this pin; therefore a DC blocking capacitor is necessary for proper RF-OUT and DC-IN 3 operation. An RF choke is needed to feed DC bias without loss of RF signal due to the bias connection, as shown in “Recommended Application Circuit”. Connections to ground. Use via holes as shown in “Suggested Layout for PCB Design” to reduce ground path GND 2,4 inductance for best performance. REV. Q ECO-024740 ERA-3+ MCL NY 250304 www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com PAGE 1 OF 4 MMIC SURFACE MOUNT Monolithic Amplifier ERA-3+ 50Ω DC to 3 GHz

Supplier's Site Datasheet
RF Amplifiers - 3157-ERA-3+TR-ND - DigiKey
Thief River Falls, MN, United States
RF Amplifiers
3157-ERA-3+TR-ND
RF Amplifiers 3157-ERA-3+TR-ND
RF Amplifier IC Cellular, CATV, DBS, PCS, WLAN 0Hz ~ 3GHz

RF Amplifier IC Cellular, CATV, DBS, PCS, WLAN 0Hz ~ 3GHz

Buy Now Datasheet
RF Amplifiers - 3157-ERA-3+CT-ND - DigiKey
Thief River Falls, MN, United States
RF Amplifiers
3157-ERA-3+CT-ND
RF Amplifiers 3157-ERA-3+CT-ND
IC RF AMP CELLULAR 0HZ-3GHZ 4SMD

IC RF AMP CELLULAR 0HZ-3GHZ 4SMD

Buy Now Datasheet
RF Amplifiers - 3157-ERA-3+DKR-ND - DigiKey
Thief River Falls, MN, United States
RF Amplifiers
3157-ERA-3+DKR-ND
RF Amplifiers 3157-ERA-3+DKR-ND
IC RF AMP CELLULAR 0HZ-3GHZ 4SMD

IC RF AMP CELLULAR 0HZ-3GHZ 4SMD

Buy Now Datasheet
RF and Wireless - RF Amplifiers - ERA-3+ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
RF and Wireless - RF Amplifiers
ERA-3+
RF and Wireless - RF Amplifiers ERA-3+
IC RF AMP CELLULAR 0HZ-3GHZ 4SMD

IC RF AMP CELLULAR 0HZ-3GHZ 4SMD

Supplier's Site

Technical Specifications

  Mini-Circuits DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category RF Amplifiers RF Amplifiers RF Amplifiers
Product Number ERA-3+ 3157-ERA-3+TR-ND ERA-3+
Product Name SMT MMIC, Linear, Gain Block, HBT Amplifier, DC to 3000 MHz, 50Ω, Micro-X Style Package RF Amplifiers RF and Wireless - RF Amplifiers
RoHS Compliant RoHS
Operating Temperature -45 to 85 C (-49 to 185 F)
Frequency Range 3000 MHz 0.0 to 3000 MHz 0.0 to 3000 MHz
Minimum Gain 0.0045 dB 18.5 dB ? to 18.5 dB
Maximum Gain 24.4 dB 18.5 dB 18.5 dB
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