Microsemi Corp. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT43M60L APT43M60L

Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146779-APT43M60L Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-264-3, TO-264AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Family Name: APT43M60L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-264 [L] Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 215nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 8590pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 780W (Tc) Rds On (Maximum) @ Id, Vgs: 150 mOhm @ 21A, 10V Alternative Parts (Cross-Reference): R6524KNZC8; STW18N65M5; STW28N60M2; Introduction Date: January 09, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Microsemi Corporation Win Source Part Number: 1146779-APT43M60L Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-264-3, TO-264AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Family Name: APT43M60L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-264 [L] Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 215nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 8590pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 780W (Tc) Rds On (Maximum) @ Id, Vgs: 150 mOhm @ 21A, 10V Alternative Parts (Cross-Reference): R6524KNZC8; STW18N65M5; STW28N60M2; Introduction Date: January 09, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT43M60L - 1146779-APT43M60L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT43M60L
1146779-APT43M60L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT43M60L 1146779-APT43M60L
Manufacturer: Microsemi Corporation Win Source Part Number: 1146779-APT43M60L Series: POWER MOS 8 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-264-3, TO-264AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Family Name: APT43M60L Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.microsemi.com Manufacturer Package: TO-264 [L] Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Maximum) @ Vgs: 215nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 8590pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 780W (Tc) Rds On (Maximum) @ Id, Vgs: 150 mOhm @ 21A, 10V Alternative Parts (Cross-Reference): R6524KNZC8; STW18N65M5; STW28N60M2; Introduction Date: January 09, 2006 ECCN: EAR99 Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited

Manufacturer: Microsemi Corporation
Win Source Part Number: 1146779-APT43M60L
Series: POWER MOS 8
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-264-3, TO-264AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Family Name: APT43M60L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.microsemi.com
Manufacturer Package: TO-264 [L]
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs: 215nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 8590pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 780W (Tc)
Rds On (Maximum) @ Id, Vgs: 150 mOhm @ 21A, 10V
Alternative Parts (Cross-Reference): R6524KNZC8; STW18N65M5; STW28N60M2;
Introduction Date: January 09, 2006
ECCN: EAR99
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1146779-APT43M60L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT43M60L
PD 780000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

PMIC - PMIC - Gate Drivers - LM5111-2MYX/NOPB - 1054840-LM5111-2MYX/NOPB - Win Source Electronics
Specs
Polarity N-Channel
TJ -40 to 125 C (-40 to 257 F)
Package Type SOT3; 8-MSOP-PowerPad
View Details
MOSFETs - 1827039 - RS Components, Ltd.
RS Components, Ltd.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement
Package Type SOT23; Sot-23
View Details
N-channel TrenchMOS standard level FET - BUK7Y12-55B,115 - Nexperia B.V.
Specs
Package Type SOT669
Transistor Grade / Operating Range Automotive
View Details
5 suppliers
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N6788 JANTX - 1036427-2N6788 JANTX - Win Source Electronics
Specs
TJ -55 C (-67 F)
Package Type TO-3; TO-39; SOT3
View Details