P-channel enhancement mode MOSFET designed for switching applications such as high-side load switching, relay driving, and high-speed line driving, available in a 3-lead TO-236AB (SOT23) surface-mounted package. It has a drain-source voltage rating of -20 V, continuous drain current of -2 A at 25°C ambient, and a typical on-state resistance of 120 mΩ at -4.5 V gate-source voltage. The device dissipates up to 480 mW in free air with a standard footprint and is AEC-Q101 qualified for automotive use.
Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB Product overview: BSH205G2 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 2A, 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 2A, 20V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BSH205G2 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 285-BSH205G2 |
| Product Name | P-Channel 2A 20V MOSFET Transistor |
