Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 3LP03M-TL-E 3LP03M-TL-E

The 3LP03M is a P-channel silicon MOSFET designed for general-purpose switching applications, featuring a 30 V drain-to-source voltage rating, 0.25 A continuous drain current, and a low on-state resistance of 1.5 to 2.8 Ω at gate-source voltages of −4 V and −2.5 V. It supports 2.5 V drive and includes a built-in gate-to-source protection diode. The device is packaged in a compact 3-pin MCP package with dimensions of 2.0 mm × 1.2 mm × 0.9 mm and meets the AEC-Q200 automotive qualification standard. It operates within a junction temperature range of −55°C to 150°C and has an allowable power dissipation of 0.15 W.