The TP2104 is a P-channel enhancement-mode vertical DMOS FET designed for switching and amplifying applications requiring low threshold voltage, high input impedance, and fast switching speeds. It is available in 3-lead SOT-23 and 3-lead TO-92 packages, with maximum drain-to-source voltage of -40V and gate-to-source voltage of ±20V. Operating ambient and storage temperatures range from -55°C to +150°C. The device features an integral source-drain diode, positive temperature coefficient, and thermal stability, with thermal resistance of 203°C/W for SOT-23 and 132°C/W for TO-92. Maximum continuous drain current is -160 mA for SOT-23 and -175 mA for TO-92. The part is lead-free and RoHS-compliant, with junction temperature limited by maximum power dissipation of 0.36 W for SOT-23 and 0.74 W for TO-92 at 25°C ambient.
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features
| Microchip Technology, Inc. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | TP2104 |
| Product Name | -40V P-Channel Enhancement-Mode MOSFET |
| Polarity | P-Channel |
