Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2059L-E 2SK2059L-E

The 2SK2059L-E is an N-channel MOSFET designed for high-speed power switching in applications such as switching regulators and DC-DC converters. It is packaged in a DPAK(L)-(1) case, measuring 6.5 mm × 5.4 mm with a typical mass of 0.42 g. The device has a drain-to-source voltage rating of 600 V, a continuous drain current of 3 A, and a maximum pulsed drain current of 6 A. Its static drain-to-source on-resistance is specified at 3.8 Ω to 5.0 Ω at 1 A and 10 V gate-source voltage. The gate-to-source voltage rating is ±30 V, and channel dissipation is rated at 20 W at Tc = 25°C. Operating junction temperature ranges from −55°C to 150°C, and storage temperature ranges from −55°C to 150°C. The part meets RoHS compliance and is rated as "Standard" quality for general industrial and consumer applications.