Microchip Technology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT6013B2FLLG APT6013B2FLLG

Description
Manufacturer: Microchip Technology Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1183005-APT6013B2FLL G Current Rating: 43 A Drain to Source Voltage (Vdss): 600 V Number of Elements: 1 Input Capacitance: 5.63 nF Power Dissipation: 565 W Number of Pins: 3 Rise Time: 14 ns Fall Time: 8 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-247-3 Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Lead Free: Lead Free Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Voltage Rating (DC): 600 V Max Power Dissipation: 565 W Turn-On Delay Time: 11 ns Max Operating Temperature: 150 °C Continuous Drain Current (ID): 43 A Turn-Off Delay Time: 27 ns Gate to Source Voltage (Vgs): 30 V Rds On Max: 130 mΩ
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Description
Manufacturer: Microchip Technology Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1183005-APT6013B2FLL G Current Rating: 43 A Drain to Source Voltage (Vdss): 600 V Number of Elements: 1 Input Capacitance: 5.63 nF Power Dissipation: 565 W Number of Pins: 3 Rise Time: 14 ns Fall Time: 8 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-247-3 Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Lead Free: Lead Free Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Voltage Rating (DC): 600 V Max Power Dissipation: 565 W Turn-On Delay Time: 11 ns Max Operating Temperature: 150 °C Continuous Drain Current (ID): 43 A Turn-Off Delay Time: 27 ns Gate to Source Voltage (Vgs): 30 V Rds On Max: 130 mΩ
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT6013B2FLLG - 1183005-APT6013B2FLLG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT6013B2FLLG
1183005-APT6013B2FLLG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT6013B2FLLG 1183005-APT6013B2FLLG
Manufacturer: Microchip Technology Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1183005-APT6013B2FLL G Current Rating: 43 A Drain to Source Voltage (Vdss): 600 V Number of Elements: 1 Input Capacitance: 5.63 nF Power Dissipation: 565 W Number of Pins: 3 Rise Time: 14 ns Fall Time: 8 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-247-3 Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Lead Free: Lead Free Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Voltage Rating (DC): 600 V Max Power Dissipation: 565 W Turn-On Delay Time: 11 ns Max Operating Temperature: 150 °C Continuous Drain Current (ID): 43 A Turn-Off Delay Time: 27 ns Gate to Source Voltage (Vgs): 30 V Rds On Max: 130 mΩ

Manufacturer: Microchip Technology
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1183005-APT6013B2FLLG
Current Rating: 43 A
Drain to Source Voltage (Vdss): 600 V
Number of Elements: 1
Input Capacitance: 5.63 nF
Power Dissipation: 565 W
Number of Pins: 3
Rise Time: 14 ns
Fall Time: 8 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-247-3
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
Lead Free: Lead Free
Mount: Through Hole
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Voltage Rating (DC): 600 V
Max Power Dissipation: 565 W
Turn-On Delay Time: 11 ns
Max Operating Temperature: 150 °C
Continuous Drain Current (ID): 43 A
Turn-Off Delay Time: 27 ns
Gate to Source Voltage (Vgs): 30 V
Rds On Max: 130 mΩ

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1183005-APT6013B2FLLG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT6013B2FLLG
PD 565000 milliwatts
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