Microchip Technology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT30M36B2LLG APT30M36B2LLG

Description
Manufacturer: Microchip Technology Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1161957-APT30M36B2LL G Current Rating: 84 A Drain to Source Voltage (Vdss): 300 V Number of Elements: 1 Input Capacitance: 6.48 nF Power Dissipation: 568 W Number of Pins: 3 Rise Time: 31 ns Fall Time: 4 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-264 Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited Lead Free: Lead Free Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Voltage Rating (DC): 300 V Turn-On Delay Time: 15 ns Max Operating Temperature: 150 °C Continuous Drain Current (ID): 84 A Turn-Off Delay Time: 29 ns Gate to Source Voltage (Vgs): 30 V
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Description
Manufacturer: Microchip Technology Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1161957-APT30M36B2LL G Current Rating: 84 A Drain to Source Voltage (Vdss): 300 V Number of Elements: 1 Input Capacitance: 6.48 nF Power Dissipation: 568 W Number of Pins: 3 Rise Time: 31 ns Fall Time: 4 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-264 Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited Lead Free: Lead Free Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Voltage Rating (DC): 300 V Turn-On Delay Time: 15 ns Max Operating Temperature: 150 °C Continuous Drain Current (ID): 84 A Turn-Off Delay Time: 29 ns Gate to Source Voltage (Vgs): 30 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT30M36B2LLG - 1161957-APT30M36B2LLG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT30M36B2LLG
1161957-APT30M36B2LLG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT30M36B2LLG 1161957-APT30M36B2LLG
Manufacturer: Microchip Technology Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1161957-APT30M36B2LL G Current Rating: 84 A Drain to Source Voltage (Vdss): 300 V Number of Elements: 1 Input Capacitance: 6.48 nF Power Dissipation: 568 W Number of Pins: 3 Rise Time: 31 ns Fall Time: 4 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-264 Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited Lead Free: Lead Free Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Voltage Rating (DC): 300 V Turn-On Delay Time: 15 ns Max Operating Temperature: 150 °C Continuous Drain Current (ID): 84 A Turn-Off Delay Time: 29 ns Gate to Source Voltage (Vgs): 30 V

Manufacturer: Microchip Technology
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1161957-APT30M36B2LLG
Current Rating: 84 A
Drain to Source Voltage (Vdss): 300 V
Number of Elements: 1
Input Capacitance: 6.48 nF
Power Dissipation: 568 W
Number of Pins: 3
Rise Time: 31 ns
Fall Time: 4 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-264
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Lead Free: Lead Free
Mount: Through Hole
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Voltage Rating (DC): 300 V
Turn-On Delay Time: 15 ns
Max Operating Temperature: 150 °C
Continuous Drain Current (ID): 84 A
Turn-Off Delay Time: 29 ns
Gate to Source Voltage (Vgs): 30 V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1161957-APT30M36B2LLG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT30M36B2LLG
PD 568000 milliwatts
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