Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3432-Z-AZ 2SK3432-Z-AZ

The 2SK3432-Z-AZ is an N-channel power MOSFET in the TO-263 package, designed for high current switching applications. It features a maximum drain-to-source voltage of 40 V, a continuous drain current of ±83 A, and a power dissipation of 100 W at 25°C case temperature. The device has a typical on-state resistance of 4.0 mΩ at VGS = 10 V and ID = 42 A, with a gate-source voltage rating of ±20 V. It includes a built-in gate protection diode and operates within a channel temperature range of -55°C to 150°C. The part meets RoHS compliance and is classified as Standard quality grade for non-safety-critical applications.