CMPA1C1D060D is a gallium-nitride (GaN) high-electron-mobili
ty transistor (HEMT) based monolithic-microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25-μm gate-length fabrication process. GaN-on-SiC has superior properties compared to silicon; gallium arsenide or GaN-on-Si; including higher breakdown voltage; higher saturated-electron-d
rift velocity and higher thermal conductivity.
CMPA1C1D060D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) based monolithic-microwave integrated circuit (MMIC) on a silicon carbide substrate; using a 0.25-μm gate-length fabrication process. GaN-on-SiC has superior properties compared to silicon; gallium arsenide or GaN-on-Si; including higher breakdown voltage; higher saturated-electron-drift velocity and higher thermal conductivity.
