The NGTB50N60FWG is a 600 V, 50 A insulated gate bipolar transistor (IGBT) in a TO-247-3 package, designed for high-efficiency switching in applications such as solar inverters, uninterruptible power supplies, and motor drives. It features a trench structure that enables a low collector-emitter saturation voltage of 1.45 V typ. at 50 A and 15 V gate-emitter voltage, and a 5 μs short-circuit withstand time. The device includes an integrated fast reverse recovery diode with a forward voltage of 1.95 V typ. at 50 A and a reverse recovery charge of 0.4 μC. Thermal resistance from junction to case is 0.56 °C/W for the IGBT and 0.74 °C/W for the diode. The package is Pb-free and meets RoHS requirements. Operating junction temperature ranges from -55 °C to +150 °C.
Manufacturer: ON Semiconductor
Win Source Part Number: 929130-NGTB50N60FWG
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: IGBT Trench 600 V 100 A 223 W Through Hole TO-247
Package: Tube
Package: TO-247-3
Mounting: Through Hole
Part Status: Obsolete
Categories: Discrete Semiconductor Products
Case / Package: TO-247
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
Quantity per package: 30
HTSUS: 8541.29.0095
| Win Source Electronics | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 929130-NGTB50N60FWG |
| Product Name | IGBTs - Single - NGTB50N60FWG |
| TJ | -55 to 150 C (-67 to 302 F) |
