The IKW25N120CS7 is a 1200 V TRENCHSTOP IGBT 7 device co-packed with a soft and fast recovery diode, designed for hard switching applications such as industrial drives and solar inverters. It is packaged in a PG-TO247-3 case with dimensions of 20.70 to 21.50 mm in length, 15.50 to 16.30 mm in width, and 4.70 to 5.30 mm in height. The device features a collector-emitter voltage rating of 1200 V, a continuous collector current of 25 A, and a short circuit ruggedness of 8 µs. It has a collector-emitter saturation voltage of 2.00 V at 175 °C and a gate-emitter threshold voltage between 5.15 V and 6.45 V. Thermal resistance from junction to ambient is 40 K/W, and junction temperature operates from -40 °C to 175 °C. The product is qualified for industrial applications according to JEDEC47/20/22 standards but is not AEC-Q100 or AEC-Q101 qualified.
1200 V TRENCHSTOP IGBT 7 TECHNOL
| DigiKey | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 448-AIKWH25N120CS7XKSA1-ND |
| Product Name | Single IGBTs |
| TJ | -40 to 175 C (-40 to 347 F) |