Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2111-D-T1-AZ 2SK2111-D-T1-AZ

The 2SK2111 is an N-channel MOSFET designed for high-speed switching applications, capable of being directly driven by 5 V IC outputs. It features a low ON resistance of 0.6 Ω maximum at VGS = 4.0 V and ID = 0.5 A, with total switching time under 100 ns. The device supports a drain-source voltage of 60 V and a continuous drain current of 1.0 A, with a maximum power dissipation of 2.0 W on a 16 cm², 0.7 mm ceramic substrate. It is housed in a package with dimensions of 5.2 mm × 3.0 mm × 1.5 mm. The part is classified as Standard quality grade for use in computers, office equipment, and industrial robots.