Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - 24N025S 24N025S

Manufacturer: Infineon Technologies
Win Source Part Number: 075213-24N025S
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 27A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 2V @ 90μA
Max Gate Charge: 52nC @ 5V
Max Input Capacitance: 6530pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.4 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance

MOSFET N-CH 25V 100A TDSON-8 Product overview: 24N025S from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 100A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-24N025S can be used for catalog matching and distributor lookup.