The ALD210802SCL is a quad monolithic precision enhancement mode N-channel EPAD® MOSFET array in a 16-pin SOIC package, designed for low-voltage, low-power analog applications. Each device has a tightly controlled gate threshold voltage of +0.20V ±0.020V with a typical offset voltage of 2mV and a maximum of 10mV between matched pairs. It operates at supply voltages as low as +0.05V, with subthreshold current below 1nA and power consumption below 1nW. The array features a low RDS(ON) of 25Ω at VGS = +5.2V and an output current capacity exceeding 50mA. Temperature tracking is excellent, with a gate threshold voltage temperature coefficient of -1.6mV/°C. The device meets RoHS standards and is qualified for operation from 0°C to +70°C. ESD protection is required during handling.
MOSFET Array 4 N-Channel, Matched Pair 10.6V 80mA 500mW Surface Mount 16-SOIC
Mosfet Array 4 N-Channel, Matched Pair 10.6V 80mA 500mW Surface Mount 16-SOIC
MOSFET Quad N-Ch Matched Pr VGS=0.0V
MOSFET 4N-CH 10.6V 0.08A 16SOIC
| Advanced Linear Devices, Inc. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | ALD210802SCL | ALD210802SCL-ND | ALD210802SCL | ALD210802SCL |
| Product Name | PRECISION N-CHANNEL EPAD® MOSFET ARRAY QUAD HIGH DRIVE NANOPOWER™ MATCHED PAIR | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | |||
| MOSFET Operating Mode | Enhancement; Precision Enhancement Mode | |||
| V(BR)DSS | 10 volts | |||
| IDSS | 70 milliamps |
