The CSD16410Q5A is an N-channel NexFET power MOSFET designed for high-efficiency power conversion in point-of-load synchronous buck converters for networking, telecom, and computing systems. It is packaged in a 5 mm × 6 mm SON plastic package with eight terminals. The device has a drain-to-source voltage rating of 25 V, a continuous drain current of 16 A at TC = 25°C, and a pulsed drain current of 158 A. Its on-resistance is 6.8 mΩ at VGS = 10 V and 9.6 mΩ at VGS = 4.5 V, with a threshold voltage of 1.9 V. The total gate charge is 3.9 nC at 4.5 V, and gate-to-drain charge is 1.1 nC. Thermal resistance from junction to case is 3.8 °C/W. The device is avalanche rated with 51 mJ single-pulse energy and meets RoHS standards. Operating junction and storage temperature range is -55 °C to 150 °C.
N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150
N-Channel 25V 16A (Ta), 59A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6)
N-Channel 25V 16A (Ta), 59A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6)
N-Channel 25V 16A (Ta), 59A (Tc) 3W (Ta) Surface Mount 8-VSONP (5x6)
Manufacturer: Texas Instruments
Win Source Part Number: 101762-CSD16410Q5A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSON (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 16A (Ta), 59A (Tc)
Gate-Source Threshold Voltage: 2.3V @ 250μA
Max Gate Charge: 5nC @ 4.5V
Max Input Capacitance: 740pF @ 12.5V
Maximum Gate-Source Voltage: +16V, -12V
Maximum Rds On at Id,Vgs: 8.5 mOhm @ 17A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
25V N-CH MOSFET, 59A, 8.5mR, 3.6ns Fall, SON, 150C Product overview: CSD16410Q5A from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 59A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 59A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD16410Q5A can be used for catalog matching and distributor lookup.
MOSFET N-CH 25V 16A/59A 8VSON
MOSFET N-CH 25V 16A/59A 8VSON
MOSFET N-Ch NexFET Power MOSFETs
| Texas Instruments | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD16410Q5A | 296-24254-1-ND | 101762-CSD16410Q5A | 278-CSD16410Q5A | CSD16410Q5A | CSD16410Q5A | CSD16410Q5A |
| Product Name | CSD16410Q5A N-Channel NexFET™ Power MOSFET | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD16410Q5A | 25V 59A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 25 volts | 25 volts | 25 volts | ||||
| rDS(on) | 0.0120 ohms | ||||||
| IDSS | 158000 milliamps | 16000 milliamps | |||||
| QG | 3.9 nC |
