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Texas Instruments CSD19501KCS 80V, N-Channel NexFET™ Power MOSFET, CSD19501KCS CSD19501KCS

Description
80V, N-Channel NexFET™ Power MOSFET, CSD19501KCS 3-TO-220 -55 to 175
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Suppliers

Company
Product
Description
Supplier Links
CSD19501KCS 80V, N-Channel NexFET™ Power MOSFET, CSD19501KCS - CSD19501KCS - Texas Instruments
Dallas, TX, United States
CSD19501KCS 80V, N-Channel NexFET™ Power MOSFET, CSD19501KCS
CSD19501KCS
CSD19501KCS 80V, N-Channel NexFET™ Power MOSFET, CSD19501KCS CSD19501KCS
80V, N-Channel NexFET™ Power MOSFET, CSD19501KCS 3-TO-220 -55 to 175

80V, N-Channel NexFET™ Power MOSFET, CSD19501KCS 3-TO-220 -55 to 175

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 80V N-CH NexFET Pwr MOSFET

MOSFET 80V N-CH NexFET Pwr MOSFET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CSD19501KCS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CSD19501KCS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CSD19501KCS
MOSFET N-CH 80V 100A TO220-3

MOSFET N-CH 80V 100A TO220-3

Supplier's Site
 - CSD19501KCS - Rochester Electronics
Newburyport, MA, United States
CSD19501KCS 80V, N Channel NexFET MOSFET, single TO-220, 6.6mOhm

CSD19501KCS 80V, N Channel NexFET MOSFET, single TO-220, 6.6mOhm

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19501KCS - 202951-CSD19501KCS - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19501KCS
202951-CSD19501KCS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19501KCS 202951-CSD19501KCS
Manufacturer: Texas Instruments Win Source Part Number: 202951-CSD19501KCS Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 217W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 100A (Ta) Gate-Source Threshold Voltage: 3.2V @ 250μA Max Gate Charge: 50nC @ 10V Max Input Capacitance: 3980pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.6 mOhm @ 60A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited

Manufacturer: Texas Instruments
Win Source Part Number: 202951-CSD19501KCS
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 217W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 100A (Ta)
Gate-Source Threshold Voltage: 3.2V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 3980pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.6 mOhm @ 60A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited

Supplier's Site Datasheet
Single FETs, MOSFETs - 296-37286-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-37286-5-ND
Single FETs, MOSFETs 296-37286-5-ND
N-Channel 80V 100A (Ta) 217W (Tc) Through Hole TO-220-3

N-Channel 80V 100A (Ta) 217W (Tc) Through Hole TO-220-3

Supplier's Site Datasheet
Mosfet, N Channel, 80V, 100A, To-220-3; Transistor Polarity Texas Instruments - 26AJ5577 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 80V, 100A, To-220-3; Transistor Polarity Texas Instruments
26AJ5577
Mosfet, N Channel, 80V, 100A, To-220-3; Transistor Polarity Texas Instruments 26AJ5577
MOSFET, N CHANNEL, 80V, 100A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.6V; Power RoHS Compliant: Yes

MOSFET, N CHANNEL, 80V, 100A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.6V; Power RoHS Compliant: Yes

Supplier's Site
MOSFET N-CH 80V 100A TO220 - 815-CSD19501KCS - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 80V 100A TO220
815-CSD19501KCS
MOSFET N-CH 80V 100A TO220 815-CSD19501KCS
MOSFET N-CH 80V 100A TO220

MOSFET N-CH 80V 100A TO220

Supplier's Site

Technical Specifications

  Texas Instruments VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Rochester Electronics Win Source Electronics DigiKey Newark, An Avnet Company Utmel Electronic Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number CSD19501KCS CSD19501KCS CSD19501KCS CSD19501KCS 202951-CSD19501KCS 296-37286-5-ND 26AJ5577 815-CSD19501KCS
Product Name CSD19501KCS 80V, N-Channel NexFET™ Power MOSFET, CSD19501KCS MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19501KCS Single FETs, MOSFETs Mosfet, N Channel, 80V, 100A, To-220-3; Transistor Polarity Texas Instruments MOSFET N-CH 80V 100A TO220
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 80 volts 80 volts 80 volts
IDSS 146000 milliamps 100000 milliamps
QG 38 nC
Package Type TO-220 TO-220; TO-220-3 TO-220; TO-220-3 TO-220; SOT3; TO-220-3 TO-220; TO-220-3 TO-3; TO-220
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