The CSD19501KCS is an 80V N-Channel NexFET,Ñ¢ Power MOSFET from Texas Instruments, designed for high-efficiency power conversion applications. It features a low on-resistance of 5.5mOc at a gate-to-source voltage of 10V, which helps minimize conduction losses. The device is avalanche rated and has a maximum continuous drain current of 100A, with a pulsed drain current capability of up to 305A. This MOSFET operates within a temperature range of -55¬8C to 175¬8C and is housed in a TO-220 plastic package, making it suitable for various applications including synchronous rectification and motor control. The device is compliant with RoHS and halogen-free standards, ensuring it meets environmental regulations. Its low thermal resistance and gate charge characteristics contribute to efficient performance in demanding applications.
80V, N-Channel NexFET™ Power MOSFET, CSD19501KCS 3-TO-220 -55 to 175
80-V, N channel NexFET™ power MOSFET, single TO-220, 6.6 mOhm 3-TO-220 -55 to 175 Product overview: CSD19501KCS from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 6.6 mOhm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 6.6 mOhm, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD19501KCS can be used for catalog matching and distributor lookup.
Manufacturer: Texas Instruments
Win Source Part Number: 202951-CSD19501KCS
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 217W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 100A (Ta)
Gate-Source Threshold Voltage: 3.2V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 3980pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.6 mOhm @ 60A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Power Field-Effect Transistor, 100A I(D), 80V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
N-Channel 80V 100A (Ta) 217W (Tc) Through Hole TO-220-3
MOSFET N-CH 80V 100A TO220
MOSFET N-CH 80V 100A TO220-3
MOSFET 80V N-CH NexFET Pwr MOSFET
MOSFET, N CHANNEL, 80V, 100A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.6V; Power RoHS Compliant: Yes
| Texas Instruments | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Rochester Electronics | DigiKey | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD19501KCS | 278-CSD19501KCS | 202951-CSD19501KCS | CSD19501KCS | 296-37286-5-ND | 815-CSD19501KCS | CSD19501KCS | CSD19501KCS | 26AJ5577 |
| Product Name | CSD19501KCS 80V, N-Channel NexFET™ Power MOSFET, CSD19501KCS | N-Channel 6.6 mOhm TO-220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19501KCS | Single FETs, MOSFETs | MOSFET N-CH 80V 100A TO220 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N Channel, 80V, 100A, To-220-3; Transistor Polarity Texas Instruments | |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 80 volts | 80 volts | 80 volts | ||||||
| IDSS | 146000 milliamps | 100000 milliamps | |||||||
| QG | 38 nC | ||||||||
| Package Type | TO-220 | TO-220; SOT3; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3; TO-220 |
