Qorvo 650 V, 27 mohm SiC FET UJ3C065030B3

Description
Qorvo's UJ3C065030B3 650 V, 27 mohm RDS(on) SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. Available in the D2PAK-3L package, this device exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.
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Product
Description
Supplier Links
650 V, 27 mohm SiC FET - UJ3C065030B3 - Qorvo
Greensboro, NC, United States
650 V, 27 mohm SiC FET
UJ3C065030B3
650 V, 27 mohm SiC FET UJ3C065030B3
Qorvo's UJ3C065030B3 650 V, 27 mohm RDS(on) SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. Available in the D2PAK-3L package, this device exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.

Qorvo's UJ3C065030B3 650 V, 27 mohm RDS(on) SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. Available in the D2PAK-3L package, this device exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.

Supplier's Site Datasheet
Single FETs, MOSFETs - 2312-UJ3C065030B3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2312-UJ3C065030B3DKR-ND
Single FETs, MOSFETs 2312-UJ3C065030B3DKR-ND
N-Channel 650V 65A (Tc) 242W (Tc) Surface Mount TO-263 (D2Pak)

N-Channel 650V 65A (Tc) 242W (Tc) Surface Mount TO-263 (D2Pak)

Buy Now Datasheet
Single FETs, MOSFETs - 2312-UJ3C065030B3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2312-UJ3C065030B3CT-ND
Single FETs, MOSFETs 2312-UJ3C065030B3CT-ND
N-Channel 650V 65A (Tc) 242W (Tc) Surface Mount TO-263 (D2Pak)

N-Channel 650V 65A (Tc) 242W (Tc) Surface Mount TO-263 (D2Pak)

Buy Now Datasheet
Single FETs, MOSFETs - 2312-UJ3C065030B3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2312-UJ3C065030B3TR-ND
Single FETs, MOSFETs 2312-UJ3C065030B3TR-ND
N-Channel 650V 65A (Tc) 242W (Tc) Surface Mount TO-263 (D2Pak)

N-Channel 650V 65A (Tc) 242W (Tc) Surface Mount TO-263 (D2Pak)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1353434-UJ3C065030B3 - Win Source Electronics
Yishun, Singapore
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1353434-UJ3C065030B3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1353434-UJ3C065030B3
Win Source Part Number: 1353434-UJ3C065030B3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 175°C (TJ) Fake Threat In the Open Market: 49 pct. MSL Level: 1 (Unlimited) Mfr: Qorvo Package: Tape & Reel Product Status: Active Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Base Product Number: UJ3C065030 FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V Vgs(th) (Max) @ Id: 6V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Power Dissipation (Max): 242W (Tc) Mounting Type: Surface Mount HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99

Win Source Part Number: 1353434-UJ3C065030B3
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
Mfr: Qorvo
Package: Tape & Reel
Product Status: Active
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Base Product Number: UJ3C065030
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
Vgs(th) (Max) @ Id: 6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Power Dissipation (Max): 242W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 650V/30mOhm SiC CASCODE G3

MOSFET 650V/30mOhm SiC CASCODE G3

Buy Now Datasheet
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
UJ3C065030B3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs UJ3C065030B3
MOSFET N-CH 650V 65A TO263

MOSFET N-CH 650V 65A TO263

Supplier's Site
Sic Schottky Diode, 650V, 65A, D2Pak Rohs Compliant Unitedsic - 47AK1768 - Newark, An Avnet Company
Chicago, IL, United States
Sic Schottky Diode, 650V, 65A, D2Pak Rohs Compliant Unitedsic
47AK1768
Sic Schottky Diode, 650V, 65A, D2Pak Rohs Compliant Unitedsic 47AK1768
SIC SCHOTTKY DIODE, 650V, 65A, D2PAK ROHS COMPLIANT: YES

SIC SCHOTTKY DIODE, 650V, 65A, D2PAK ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Qorvo DigiKey Win Source Electronics VAST STOCK CO., LIMITED Acme Chip Technology Co., Limited Newark, An Avnet Company
Product Category RF Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors
Product Number UJ3C065030B3 2312-UJ3C065030B3DKR-ND 1353434-UJ3C065030B3 UJ3C065030B3 UJ3C065030B3 47AK1768
Product Name 650 V, 27 mohm SiC FET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Sic Schottky Diode, 650V, 65A, D2Pak Rohs Compliant Unitedsic
Transistor Technology / Material 650 V, 27 mohm SiC FET
Transistor Grade / Operating Range Military; Automotive
Package Type D2PAK-3L TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3 Surface Mount TO-3; TO-252 (DPAK)
Polarity N-Channel N-Channel
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