Qorvo's UJ3C065030B3 650 V, 27 mohm RDS(on) SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. Available in the D2PAK-3L package, this device exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.
N-Channel 650V 65A (Tc) 242W (Tc) Surface Mount TO-263 (D2Pak)
N-Channel 650V 65A (Tc) 242W (Tc) Surface Mount TO-263 (D2Pak)
N-Channel 650V 65A (Tc) 242W (Tc) Surface Mount TO-263 (D2Pak)
Win Source Part Number: 1353434-UJ3C065030B3
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
Mfr: Qorvo
Package: Tape & Reel
Product Status: Active
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Base Product Number: UJ3C065030
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
Vgs(th) (Max) @ Id: 6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Power Dissipation (Max): 242W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
MOSFET 650V/30mOhm SiC CASCODE G3
MOSFET N-CH 650V 65A TO263
SIC SCHOTTKY DIODE, 650V, 65A, D2PAK ROHS COMPLIANT: YES
Qorvo | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
---|---|---|---|---|---|---|
Product Category | RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors |
Product Number | UJ3C065030B3 | 2312-UJ3C065030B3DKR-ND | 1353434-UJ3C065030B3 | UJ3C065030B3 | UJ3C065030B3 | 47AK1768 |
Product Name | 650 V, 27 mohm SiC FET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Sic Schottky Diode, 650V, 65A, D2Pak Rohs Compliant Unitedsic |
Transistor Technology / Material | 650 V, 27 mohm SiC FET | |||||
Transistor Grade / Operating Range | Military; Automotive | |||||
Package Type | D2PAK-3L | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3 | Surface Mount | TO-3; TO-252 (DPAK) | |
Polarity | N-Channel | N-Channel |