Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SA1319S-AA 2SA1319S-AA

The 2SA1319 is a PNP silicon transistor designed for high-voltage switching applications, with a collector-to-base voltage rating of -180 V, collector-to-emitter voltage of -160 V, and a continuous collector current of 0.7 A. It dissipates 700 mW at 25°C ambient temperature and operates with a maximum junction temperature of 150°C. The device is packaged in a case measuring 5.0 mm × 4.0 mm. The DC current gain (hFE) ranges from 140 to 280 at -100 mA collector current, and the gain-bandwidth product is 120 MHz at -50 mA collector current. The 2SA1319S-AA is a variant of the 2SA1319 series, with the 'S' suffix indicating the hFE bin of 140 to 280.